Moonsup Han

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78 Article
4 Conference contribution
2 Paper
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Advanced spectroscopic methods for probing in-gap defect states in amorphous SiN_x for charge trap memory applications
Kim, H. D., Gu, M., Lee, K. M., Ahn, H., Byun, J., Yon, G., Beak, J., Lim, H., Jung, J., Park, J., Kim, J. S., Hahm, H. J., Kim, S., Min, W. J., Hyun, M. S., Chang Park, Y., Kim, G., Park, Y., Han, M. & Choi, E. & 1 others, Chang, Y. J., Jan 2025, In: Current Applied Physics. 69, p. 21-27 7 p.
Research output: Contribution to journal › Article › peer-review

Open Access
7 Scopus citations
Charge Transfer Doping of MoS₂ Field-Effect Transistors by Aluminum Oxynitride Deposition
Park, B., Gu, M., Nam, S., Kim, H., Im, J., Ahn, H., Chang, Y. J. & Han, M., Dec 2025, In: Physica Status Solidi (A) Applications and Materials Science. 222, 24, e202500087.
Research output: Contribution to journal › Article › peer-review

Open Access
Phonon-Assisted Charge Trapping and Threshold Voltage Modulation in MoS₂FETs with AlO_xN_yOverlayers
Nam, S., Ahn, H., Park, B., Gu, M., Park, H. S., Choi, S., Chang, Y. J. & Han, M., 27 Aug 2025, In: ACS Applied Materials and Interfaces. 17, 34, p. 48592-48599 8 p.
Research output: Contribution to journal › Article › peer-review
Tailoring charge trap characteristics of cobalt and silicon hybrid nanostructure: Phases and interface effects of thermal treatment
Ahn, H., Gu, M., Joo, B. S., Chang, Y. J. & Han, M., 15 Oct 2025, In: Journal of Alloys and Compounds. 1042, 184159.
Research output: Contribution to journal › Article › peer-review
Ti-doping in Silicon Nitride: Enhanced Charge Trap Characteristics for Flash Memory
Ahn, H., Park, H. S., Gu, M., Khim, Y. H., Kim, H. D., Im, J., Nam, S., Choi, E., Chang, Y. J. & Han, M., 11 Mar 2025, In: ACS Applied Electronic Materials. 7, 5, p. 1756-1763 8 p.
Research output: Contribution to journal › Article › peer-review
2 Scopus citations

Moonsup Han

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Collaborations and top research areas from the last five years

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Advanced spectroscopic methods for probing in-gap defect states in amorphous SiN_x for charge trap memory applications

Charge Transfer Doping of MoS₂ Field-Effect Transistors by Aluminum Oxynitride Deposition

Phonon-Assisted Charge Trapping and Threshold Voltage Modulation in MoS₂FETs with AlO_xN_yOverlayers

Tailoring charge trap characteristics of cobalt and silicon hybrid nanostructure: Phases and interface effects of thermal treatment

Ti-doping in Silicon Nitride: Enhanced Charge Trap Characteristics for Flash Memory

Moonsup Han

Personal profile

Fingerprint

Collaborations and top research areas from the last five years

Research output

Advanced spectroscopic methods for probing in-gap defect states in amorphous SiNx for charge trap memory applications

Charge Transfer Doping of MoS2 Field-Effect Transistors by Aluminum Oxynitride Deposition

Phonon-Assisted Charge Trapping and Threshold Voltage Modulation in MoS2FETs with AlOxNyOverlayers

Tailoring charge trap characteristics of cobalt and silicon hybrid nanostructure: Phases and interface effects of thermal treatment

Ti-doping in Silicon Nitride: Enhanced Charge Trap Characteristics for Flash Memory

Advanced spectroscopic methods for probing in-gap defect states in amorphous SiN_x for charge trap memory applications

Charge Transfer Doping of MoS₂ Field-Effect Transistors by Aluminum Oxynitride Deposition

Phonon-Assisted Charge Trapping and Threshold Voltage Modulation in MoS₂FETs with AlO_xN_yOverlayers