Taewan Kim

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112 Article
17 Conference contribution
2 Comment/debate
1 Conference article
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- 1 Review article

Enhanced electrical performances with HZO/β-Ga₂O₃ 3D FinFET toward highly perceptual synaptic device application
Park, S., Yoo, J., Oh, S., Lee, H., Park, M., Lim, S., Kim, S., Jung, S., Kim, B., Heo, K., Moon, T., Kim, T. W., Si, M., Ye, P. D. & Bae, H., Jan 2026, In: Materials Science in Semiconductor Processing. 201, 110104.
Research output: Contribution to journal › Article › peer-review
Enhancement of thermoelectric properties in n-type Bi₂Te₃ through defect engineering via in situ NiTe₂ precipitates
Chang, G., Kim, S. Y., Lee, G. H., Ju, C., Park, J., Ha, S., Kim, Y., Kim, S. I., Kim, T. W. & Kwon, M. S., Mar 2026, In: Solid State Sciences. 173, 108199.
Research output: Contribution to journal › Article › peer-review
Local Surface Potential Modification of Few-Layer MoS₂ Via Optical Soldering Induced n-Doping Process
Kim, D., Choi, H., Seo, D. H., Kim, T., Shin, C. H. & Kim, H., 20 Jan 2026, In: Advanced Materials Interfaces. 13, 2, e00871.
Research output: Contribution to journal › Article › peer-review

Open Access
Neutron Irradiation-Induced Trap States and Electrical Performance Degradation in ReS₂ Field-Effect Transistors
Back, S. Y., Seo, G. D., Heo, J. W., Bae, H., Jung, B. K. & Kim, T. W., Jan 2026, In: Electronic Materials Letters. 22, 1, p. 1-7 7 p.
Research output: Contribution to journal › Article › peer-review
Achieving exceptional elasto-dielectric properties in soft and stretchable elastomers through liquid metal particle incorporation: a comprehensive insight into fundamentals and multifaceted applications
Bhuyan, P., Singh, M., Bae, H., Kim, T. W. & Park, S., Aug 2025, In: Advanced Composites and Hybrid Materials. 8, 4, 293.
Research output: Contribution to journal › Review article › peer-review

Open Access
2 Scopus citations

Taewan Kim

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Collaborations and top research areas from the last five years

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Enhanced electrical performances with HZO/β-Ga₂O₃ 3D FinFET toward highly perceptual synaptic device application

Enhancement of thermoelectric properties in n-type Bi₂Te₃ through defect engineering via in situ NiTe₂ precipitates

Local Surface Potential Modification of Few-Layer MoS₂ Via Optical Soldering Induced n-Doping Process

Neutron Irradiation-Induced Trap States and Electrical Performance Degradation in ReS₂ Field-Effect Transistors

Achieving exceptional elasto-dielectric properties in soft and stretchable elastomers through liquid metal particle incorporation: a comprehensive insight into fundamentals and multifaceted applications

Taewan Kim

Personal profile

Fingerprint

Collaborations and top research areas from the last five years

Research output

Enhanced electrical performances with HZO/β-Ga2O3 3D FinFET toward highly perceptual synaptic device application

Enhancement of thermoelectric properties in n-type Bi2Te3 through defect engineering via in situ NiTe2 precipitates

Local Surface Potential Modification of Few-Layer MoS2 Via Optical Soldering Induced n-Doping Process

Neutron Irradiation-Induced Trap States and Electrical Performance Degradation in ReS2 Field-Effect Transistors

Achieving exceptional elasto-dielectric properties in soft and stretchable elastomers through liquid metal particle incorporation: a comprehensive insight into fundamentals and multifaceted applications

Enhanced electrical performances with HZO/β-Ga₂O₃ 3D FinFET toward highly perceptual synaptic device application

Enhancement of thermoelectric properties in n-type Bi₂Te₃ through defect engineering via in situ NiTe₂ precipitates

Local Surface Potential Modification of Few-Layer MoS₂ Via Optical Soldering Induced n-Doping Process

Neutron Irradiation-Induced Trap States and Electrical Performance Degradation in ReS₂ Field-Effect Transistors