0.7 V supply highly linear subthreshold low-noise amplifier design for 2.4 GHz wireless sensor network applications

Hee Sauk Jhon; Hakchul Jung; Minsuk Koo; Ickhyun Song; Hyungcheol Shin

doi:10.1002/mop.24333

0.7 V supply highly linear subthreshold low-noise amplifier design for 2.4 GHz wireless sensor network applications

Hee Sauk Jhon, Hakchul Jung, Minsuk Koo, Ickhyun Song, Hyungcheol Shin

School of Advanced Fusion Studies

Seoul National University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A low supply voltage and highly linear subthreshold CMOS low noise amplifier (LNA) for 2.4 GHz wireless sensor network applications is presented in this letter. We applied multiple gated transistor (MGTR) technique in subthreshold region to compensate the linearity degradation of low supply cascode topology. Moreover, the feedback capacitor, C_f is used to enhance the power gain of amplifier without additional dc-power dissipation. The proposed LNA has gain of 13.1 dB, noise figure (NF) of 3.8 dB, and - 2.5 dBm IIP3 while dissipating only 0.49 mW from 0.7 V supply. The LNA has been designed using a 0.13 μm 1P8M standard CMOS process with top metal thickness of 3.3 μm.

Original language	English
Pages (from-to)	1316-1320
Number of pages	5
Journal	Microwave and Optical Technology Letters
Volume	51
Issue number	5
DOIs	https://doi.org/10.1002/mop.24333
State	Published - May 2009

Keywords

CMOS
Linearity
Low noise amplifier
Subthreshold

Access to Document

10.1002/mop.24333

Cite this

@article{6957d40bd2e1423089e20526abce5e0a,

title = "0.7 V supply highly linear subthreshold low-noise amplifier design for 2.4 GHz wireless sensor network applications",

abstract = "A low supply voltage and highly linear subthreshold CMOS low noise amplifier (LNA) for 2.4 GHz wireless sensor network applications is presented in this letter. We applied multiple gated transistor (MGTR) technique in subthreshold region to compensate the linearity degradation of low supply cascode topology. Moreover, the feedback capacitor, Cf is used to enhance the power gain of amplifier without additional dc-power dissipation. The proposed LNA has gain of 13.1 dB, noise figure (NF) of 3.8 dB, and - 2.5 dBm IIP3 while dissipating only 0.49 mW from 0.7 V supply. The LNA has been designed using a 0.13 μm 1P8M standard CMOS process with top metal thickness of 3.3 μm.",

keywords = "CMOS, Linearity, Low noise amplifier, Subthreshold",

author = "Jhon, {Hee Sauk} and Hakchul Jung and Minsuk Koo and Ickhyun Song and Hyungcheol Shin",

year = "2009",

month = may,

doi = "10.1002/mop.24333",

language = "English",

volume = "51",

pages = "1316--1320",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley & Sons Inc.",

number = "5",

}

TY - JOUR

T1 - 0.7 V supply highly linear subthreshold low-noise amplifier design for 2.4 GHz wireless sensor network applications

AU - Jhon, Hee Sauk

AU - Jung, Hakchul

AU - Koo, Minsuk

AU - Song, Ickhyun

AU - Shin, Hyungcheol

PY - 2009/5

Y1 - 2009/5

N2 - A low supply voltage and highly linear subthreshold CMOS low noise amplifier (LNA) for 2.4 GHz wireless sensor network applications is presented in this letter. We applied multiple gated transistor (MGTR) technique in subthreshold region to compensate the linearity degradation of low supply cascode topology. Moreover, the feedback capacitor, Cf is used to enhance the power gain of amplifier without additional dc-power dissipation. The proposed LNA has gain of 13.1 dB, noise figure (NF) of 3.8 dB, and - 2.5 dBm IIP3 while dissipating only 0.49 mW from 0.7 V supply. The LNA has been designed using a 0.13 μm 1P8M standard CMOS process with top metal thickness of 3.3 μm.

AB - A low supply voltage and highly linear subthreshold CMOS low noise amplifier (LNA) for 2.4 GHz wireless sensor network applications is presented in this letter. We applied multiple gated transistor (MGTR) technique in subthreshold region to compensate the linearity degradation of low supply cascode topology. Moreover, the feedback capacitor, Cf is used to enhance the power gain of amplifier without additional dc-power dissipation. The proposed LNA has gain of 13.1 dB, noise figure (NF) of 3.8 dB, and - 2.5 dBm IIP3 while dissipating only 0.49 mW from 0.7 V supply. The LNA has been designed using a 0.13 μm 1P8M standard CMOS process with top metal thickness of 3.3 μm.

KW - CMOS

KW - Linearity

KW - Low noise amplifier

KW - Subthreshold

UR - http://www.scopus.com/inward/record.url?scp=67649172911&partnerID=8YFLogxK

U2 - 10.1002/mop.24333

DO - 10.1002/mop.24333

M3 - Article

AN - SCOPUS:67649172911

SN - 0895-2477

VL - 51

SP - 1316

EP - 1320

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 5

ER -

0.7 V supply highly linear subthreshold low-noise amplifier design for 2.4 GHz wireless sensor network applications

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this