TY - JOUR
T1 - 1.25-eV GaAsSbN/Ge double-junction solar cell grown by metalorganic vapor phase epitaxy for high efficiency multijunction solar cell application
AU - Kim, Tae Wan
AU - Kim, Youngjo
AU - Kim, Kangho
AU - Lee, Jae Jin
AU - Kuech, Thomas
AU - Mawst, Luke James
PY - 2014/5
Y1 - 2014/5
N2 - Dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) with bandgap energies of 1.25 eV have been integrated into solar cell structures employing a Ge bottom cell on Ge substrate. Single homo- and heterojunction solar cells employing narrow bandgap GaAsSbN (Eg ∼ 1.25 eV) are grown normally lattice-matched on a GaAs substrate, using MOVPE. Homojunction solar cell structures were realized by employing GaAsSbN material with low carbon background concentration and Si doping to form a p/n junction. External quantum efficiency measurements in the range (870 nm-1000 nm) reveal that the efficiency of the homojunction solar cell is significantly improved over that of the heterojunction structure. The GaAsSbN homojunction cell was integrated with a Ge single-junction bottom cell on Ge substrate. Under AM1.5 direct illumination, the fabricated GaAsSbN (1.24 eV)/Ge double-junction solar cell with a 600-nm-thick GaAsSbN base layer exhibits Jsc, V oc, FF, and efficiency values of 11.59 mA/cm2, 0.83 V, 72.58%, and 7% with anti-reflection coating (ARC), respectively.
AB - Dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) with bandgap energies of 1.25 eV have been integrated into solar cell structures employing a Ge bottom cell on Ge substrate. Single homo- and heterojunction solar cells employing narrow bandgap GaAsSbN (Eg ∼ 1.25 eV) are grown normally lattice-matched on a GaAs substrate, using MOVPE. Homojunction solar cell structures were realized by employing GaAsSbN material with low carbon background concentration and Si doping to form a p/n junction. External quantum efficiency measurements in the range (870 nm-1000 nm) reveal that the efficiency of the homojunction solar cell is significantly improved over that of the heterojunction structure. The GaAsSbN homojunction cell was integrated with a Ge single-junction bottom cell on Ge substrate. Under AM1.5 direct illumination, the fabricated GaAsSbN (1.24 eV)/Ge double-junction solar cell with a 600-nm-thick GaAsSbN base layer exhibits Jsc, V oc, FF, and efficiency values of 11.59 mA/cm2, 0.83 V, 72.58%, and 7% with anti-reflection coating (ARC), respectively.
KW - Dilute-nitride materials
KW - multijunction solar cells
KW - photovoltaic cells
KW - semiconducting III-V materials
UR - http://www.scopus.com/inward/record.url?scp=84899931676&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2014.2308728
DO - 10.1109/JPHOTOV.2014.2308728
M3 - Article
AN - SCOPUS:84899931676
SN - 2156-3381
VL - 4
SP - 981
EP - 985
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
IS - 3
M1 - 6774449
ER -