1.25-eV GaAsSbN/Ge double-junction solar cell grown by metalorganic vapor phase epitaxy for high efficiency multijunction solar cell application

Tae Wan Kim, Youngjo Kim, Kangho Kim, Jae Jin Lee, Thomas Kuech, Luke James Mawst

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) with bandgap energies of 1.25 eV have been integrated into solar cell structures employing a Ge bottom cell on Ge substrate. Single homo- and heterojunction solar cells employing narrow bandgap GaAsSbN (Eg ∼ 1.25 eV) are grown normally lattice-matched on a GaAs substrate, using MOVPE. Homojunction solar cell structures were realized by employing GaAsSbN material with low carbon background concentration and Si doping to form a p/n junction. External quantum efficiency measurements in the range (870 nm-1000 nm) reveal that the efficiency of the homojunction solar cell is significantly improved over that of the heterojunction structure. The GaAsSbN homojunction cell was integrated with a Ge single-junction bottom cell on Ge substrate. Under AM1.5 direct illumination, the fabricated GaAsSbN (1.24 eV)/Ge double-junction solar cell with a 600-nm-thick GaAsSbN base layer exhibits Jsc, V oc, FF, and efficiency values of 11.59 mA/cm2, 0.83 V, 72.58%, and 7% with anti-reflection coating (ARC), respectively.

Original languageEnglish
Article number6774449
Pages (from-to)981-985
Number of pages5
JournalIEEE Journal of Photovoltaics
Volume4
Issue number3
DOIs
StatePublished - May 2014

Keywords

  • Dilute-nitride materials
  • multijunction solar cells
  • photovoltaic cells
  • semiconducting III-V materials

Fingerprint

Dive into the research topics of '1.25-eV GaAsSbN/Ge double-junction solar cell grown by metalorganic vapor phase epitaxy for high efficiency multijunction solar cell application'. Together they form a unique fingerprint.

Cite this