13.2% efficiency double-hetero structure single-junction InGaAsN solar cells grown by MOVPE

Taewan Kim, Luke J. Mawst, Youngjo Kim, Kangho Kim, Jaejin Lee, Thomas F. Kuech

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6 Scopus citations

Abstract

Low background carbon concentration InGaAsN (Eg ∼ 1.18 eV), lattice-matched on a GaAs substrate, was grown at high temperatures (∼600 °C) using metalorganic vapor phase epitaxy. This material was used as an alternative to GaAs as the middle cell in triple-junction InGaP/GaAs/Ge solar cells. The low background carbon concentration (∼5 × 1016cm-3) and increased depletion region width of the InGaAsN material significantly improves the solar cell performance over that found with dilute-nitride cells grown at lower growth temperatures (∼525 °C). The device performance of the solar cells with the low carbon InGaAsN active region yielded a short-circuit current density, open-circuit voltage, fill factor, and efficiency values of 26.05 mA/cm2, 0.67 V, 75.85%, and 13.2%, with antireflecting coating, respectively.

Original languageEnglish
Article number021205
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume33
Issue number2
DOIs
StatePublished - 1 Mar 2015

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