TY - JOUR
T1 - 3D TCAD analysis of hot-carrier degradation mechanisms in 10 nm node input/output bulk FinFETs
AU - Son, Dokyun
AU - Jeon, Sangbin
AU - Kang, Myounggon
AU - Shin, Hyungcheol
N1 - Publisher Copyright:
© 2016, Institute of Electronics Engineers of Korea. All rights reserved.
PY - 2016/4
Y1 - 2016/4
N2 - In this paper, we investigated the hotcarrier injection (HCI) mechanism, one of the most important reliability issues, in 10 nm node Input/Output (I/O) bulk FinFET. The FinFET has much intensive HCI damage in Fin-bottom region, while the HCI damage for planar device has relatively uniform behavior. The local damage behavior in the FinFET is due to the geometrical characteristics. Also, the HCI is significantly affected by doping profile, which could change the worst HCI bias condition. This work suggested comprehensive understanding of HCI mechanisms and the guideline of doping profile in 10 nm node I/O bulk FinFET.
AB - In this paper, we investigated the hotcarrier injection (HCI) mechanism, one of the most important reliability issues, in 10 nm node Input/Output (I/O) bulk FinFET. The FinFET has much intensive HCI damage in Fin-bottom region, while the HCI damage for planar device has relatively uniform behavior. The local damage behavior in the FinFET is due to the geometrical characteristics. Also, the HCI is significantly affected by doping profile, which could change the worst HCI bias condition. This work suggested comprehensive understanding of HCI mechanisms and the guideline of doping profile in 10 nm node I/O bulk FinFET.
KW - Bulk FinFET
KW - Hot carrier injection
KW - Input/output devices
UR - http://www.scopus.com/inward/record.url?scp=84964821065&partnerID=8YFLogxK
U2 - 10.5573/JSTS.2016.16.2.191
DO - 10.5573/JSTS.2016.16.2.191
M3 - Article
AN - SCOPUS:84964821065
SN - 1598-1657
VL - 16
SP - 191
EP - 197
JO - Journal of Semiconductor Technology and Science
JF - Journal of Semiconductor Technology and Science
IS - 2
ER -