50 nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature (<200°C) using Cat-CVD

Chul Lae Cho; Sung Hyun Lee; Chang Hoon Lee; Dea Hyun Lee; Sang Yoon Lee; Jang Yeon Kwon; Kyung Bae Park; Jong Man Kim; Ji Sim Jung; Wan Snick Hong

50 nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature (<200°C) using Cat-CVD

Chul Lae Cho, Sung Hyun Lee, Chang Hoon Lee, Dea Hyun Lee, Sang Yoon Lee, Jang Yeon Kwon, Kyung Bae Park, Jong Man Kim, Ji Sim Jung, Wan Snick Hong

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The influence of various process parameters for the as-deposited poly silicon was investigated. The polycrystalline silicon films were successfully deposited on glass substrates at a low-temperature (<200°C) using the catalytic chemical vapor deposition (Cat-CVD). We achieved a low hydrogen content (∼0.9%) and a high deposition rate (∼35 Å/see). The film is applicable to thin film transistors on plastic substrates.

Original language	English
Pages (from-to)	495-498
Number of pages	4
Journal	Proceedings of International Meeting on Information Display
Volume	2006
State	Published - 2006
Event	IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of Duration: 22 Aug 2006 → 25 Aug 2006

Cite this

@article{b9aa1e4a0c604889b0e3d550b95da713,

title = "50 nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature (<200°C) using Cat-CVD",

abstract = "The influence of various process parameters for the as-deposited poly silicon was investigated. The polycrystalline silicon films were successfully deposited on glass substrates at a low-temperature (<200°C) using the catalytic chemical vapor deposition (Cat-CVD). We achieved a low hydrogen content (∼0.9%) and a high deposition rate (∼35 {\AA}/see). The film is applicable to thin film transistors on plastic substrates.",

author = "Cho, {Chul Lae} and Lee, {Sung Hyun} and Lee, {Chang Hoon} and Lee, {Dea Hyun} and Lee, {Sang Yoon} and Kwon, {Jang Yeon} and Park, {Kyung Bae} and Kim, {Jong Man} and Jung, {Ji Sim} and Hong, {Wan Snick}",

year = "2006",

language = "English",

volume = "2006",

pages = "495--498",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference ; Conference date: 22-08-2006 Through 25-08-2006",

}

TY - JOUR

T1 - 50 nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature (<200°C) using Cat-CVD

AU - Cho, Chul Lae

AU - Lee, Sung Hyun

AU - Lee, Chang Hoon

AU - Lee, Dea Hyun

AU - Lee, Sang Yoon

AU - Kwon, Jang Yeon

AU - Park, Kyung Bae

AU - Kim, Jong Man

AU - Jung, Ji Sim

AU - Hong, Wan Snick

PY - 2006

Y1 - 2006

N2 - The influence of various process parameters for the as-deposited poly silicon was investigated. The polycrystalline silicon films were successfully deposited on glass substrates at a low-temperature (<200°C) using the catalytic chemical vapor deposition (Cat-CVD). We achieved a low hydrogen content (∼0.9%) and a high deposition rate (∼35 Å/see). The film is applicable to thin film transistors on plastic substrates.

AB - The influence of various process parameters for the as-deposited poly silicon was investigated. The polycrystalline silicon films were successfully deposited on glass substrates at a low-temperature (<200°C) using the catalytic chemical vapor deposition (Cat-CVD). We achieved a low hydrogen content (∼0.9%) and a high deposition rate (∼35 Å/see). The film is applicable to thin film transistors on plastic substrates.

UR - http://www.scopus.com/inward/record.url?scp=33846160607&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33846160607

SN - 1738-7558

VL - 2006

SP - 495

EP - 498

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference

Y2 - 22 August 2006 through 25 August 2006

ER -

50 nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature (<200°C) using Cat-CVD

Abstract

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