50 nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature (<200°C) using Cat-CVD

Chul Lae Cho; Sung Hyun Lee; Chang Hoon Lee; Dea Hyun Lee; Sang Yoon Lee; Jang Yeon Kwon; Kyung Bae Park; Jong Man Kim; Ji Sim Jung; Wan Snick Hong

50 nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature (<200°C) using Cat-CVD

Chul Lae Cho
, Sung Hyun Lee
, Chang Hoon Lee
, Dea Hyun Lee
, Sang Yoon Lee
, Jang Yeon Kwon
, Kyung Bae Park
, Jong Man Kim
, Ji Sim Jung
, Wan Snick Hong

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The influence of various process parameters for the as-deposited poly silicon was investigated. The polycrystalline silicon films were successfully deposited on glass substrates at a low-temperature (<200°C) using the catalytic chemical vapor deposition (Cat-CVD). We achieved a low hydrogen content (∼0.9%) and a high deposition rate (∼35 Å/see). The film is applicable to thin film transistors on plastic substrates.

Original language	English
Pages (from-to)	495-498
Number of pages	4
Journal	Proceedings of International Meeting on Information Display
Volume	2006
State	Published - 2006
Event	IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of Duration: 22 Aug 2006 → 25 Aug 2006

Cite this

@article{b9aa1e4a0c604889b0e3d550b95da713,

title = "50 nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature (<200°C) using Cat-CVD",

abstract = "The influence of various process parameters for the as-deposited poly silicon was investigated. The polycrystalline silicon films were successfully deposited on glass substrates at a low-temperature (<200°C) using the catalytic chemical vapor deposition (Cat-CVD). We achieved a low hydrogen content (∼0.9\%) and a high deposition rate (∼35 {\AA}/see). The film is applicable to thin film transistors on plastic substrates.",

author = "Cho, \{Chul Lae\} and Lee, \{Sung Hyun\} and Lee, \{Chang Hoon\} and Lee, \{Dea Hyun\} and Lee, \{Sang Yoon\} and Kwon, \{Jang Yeon\} and Park, \{Kyung Bae\} and Kim, \{Jong Man\} and Jung, \{Ji Sim\} and Hong, \{Wan Snick\}",

year = "2006",

language = "English",

volume = "2006",

pages = "495--498",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference ; Conference date: 22-08-2006 Through 25-08-2006",

}

TY - JOUR

T1 - 50 nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature (<200°C) using Cat-CVD

AU - Cho, Chul Lae

AU - Lee, Sung Hyun

AU - Lee, Chang Hoon

AU - Lee, Dea Hyun

AU - Lee, Sang Yoon

AU - Kwon, Jang Yeon

AU - Park, Kyung Bae

AU - Kim, Jong Man

AU - Jung, Ji Sim

AU - Hong, Wan Snick

PY - 2006

Y1 - 2006

N2 - The influence of various process parameters for the as-deposited poly silicon was investigated. The polycrystalline silicon films were successfully deposited on glass substrates at a low-temperature (<200°C) using the catalytic chemical vapor deposition (Cat-CVD). We achieved a low hydrogen content (∼0.9%) and a high deposition rate (∼35 Å/see). The film is applicable to thin film transistors on plastic substrates.

AB - The influence of various process parameters for the as-deposited poly silicon was investigated. The polycrystalline silicon films were successfully deposited on glass substrates at a low-temperature (<200°C) using the catalytic chemical vapor deposition (Cat-CVD). We achieved a low hydrogen content (∼0.9%) and a high deposition rate (∼35 Å/see). The film is applicable to thin film transistors on plastic substrates.

UR - https://www.scopus.com/pages/publications/33846160607

M3 - Conference article

AN - SCOPUS:33846160607

SN - 1738-7558

VL - 2006

SP - 495

EP - 498

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference

Y2 - 22 August 2006 through 25 August 2006

ER -

50 nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature (<200°C) using Cat-CVD

Abstract

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