50 nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature (<200°C) using Cat-CVD
- Chul Lae Cho
- , Sung Hyun Lee
- , Chang Hoon Lee
- , Dea Hyun Lee
- , Sang Yoon Lee
- , Jang Yeon Kwon
- , Kyung Bae Park
- , Jong Man Kim
- , Ji Sim Jung
- , Wan Snick Hong
- Sejong University
- Samsung
Research output: Contribution to journal › Conference article › peer-review
1
Scopus
citations