8 mW 17/24 GHz dual-band CMOS low-noise amplifier for ISM-band application

H. S. Jhon; I. Song; J. Jeon; H. Jung; M. Koo; B. G. Park; J. D. Lee; H. Shin

doi:10.1049/el:20081963

8 mW 17/24 GHz dual-band CMOS low-noise amplifier for ISM-band application

H. S. Jhon, I. Song, J. Jeon, H. Jung, M. Koo, B. G. Park, J. D. Lee, H. Shin

School of Advanced Fusion Studies

Seoul National University

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

A 17/24GHz dual-band CMOS low-noise amplifier (LNA) for ISM-band application is presented. The proposed LNA employs a positive feedback transmission-line-based LC-ladder network to obtain dual-band operation and reduce power consumption. For low cost, the LNA has been fabricated using a 0.18m mixed-signal CMOS process. The implemented LNA shows gains of 9.2 and 12dB, and noise figures (NF) of 5.7 and 6.4dB at 18 and 24.5GHz, respectively. The proposed LNA exhibits 8mW power consumption from a 0.8V supply and the active chip area, including pad, is about 720 × 460m².

Original language	English
Pages (from-to)	1353-1354
Number of pages	2
Journal	Electronics Letters
Volume	44
Issue number	23
DOIs	https://doi.org/10.1049/el:20081963
State	Published - 2008

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title = "8 mW 17/24 GHz dual-band CMOS low-noise amplifier for ISM-band application",

abstract = "A 17/24GHz dual-band CMOS low-noise amplifier (LNA) for ISM-band application is presented. The proposed LNA employs a positive feedback transmission-line-based LC-ladder network to obtain dual-band operation and reduce power consumption. For low cost, the LNA has been fabricated using a 0.18m mixed-signal CMOS process. The implemented LNA shows gains of 9.2 and 12dB, and noise figures (NF) of 5.7 and 6.4dB at 18 and 24.5GHz, respectively. The proposed LNA exhibits 8mW power consumption from a 0.8V supply and the active chip area, including pad, is about 720 × 460m2.",

author = "Jhon, {H. S.} and I. Song and J. Jeon and H. Jung and M. Koo and Park, {B. G.} and Lee, {J. D.} and H. Shin",

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AU - Jhon, H. S.

AU - Song, I.

AU - Jeon, J.

AU - Jung, H.

AU - Koo, M.

AU - Park, B. G.

AU - Lee, J. D.

AU - Shin, H.

PY - 2008

Y1 - 2008

N2 - A 17/24GHz dual-band CMOS low-noise amplifier (LNA) for ISM-band application is presented. The proposed LNA employs a positive feedback transmission-line-based LC-ladder network to obtain dual-band operation and reduce power consumption. For low cost, the LNA has been fabricated using a 0.18m mixed-signal CMOS process. The implemented LNA shows gains of 9.2 and 12dB, and noise figures (NF) of 5.7 and 6.4dB at 18 and 24.5GHz, respectively. The proposed LNA exhibits 8mW power consumption from a 0.8V supply and the active chip area, including pad, is about 720 × 460m2.

AB - A 17/24GHz dual-band CMOS low-noise amplifier (LNA) for ISM-band application is presented. The proposed LNA employs a positive feedback transmission-line-based LC-ladder network to obtain dual-band operation and reduce power consumption. For low cost, the LNA has been fabricated using a 0.18m mixed-signal CMOS process. The implemented LNA shows gains of 9.2 and 12dB, and noise figures (NF) of 5.7 and 6.4dB at 18 and 24.5GHz, respectively. The proposed LNA exhibits 8mW power consumption from a 0.8V supply and the active chip area, including pad, is about 720 × 460m2.

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8 mW 17/24 GHz dual-band CMOS low-noise amplifier for ISM-band application

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