A charge trap folded nand flash memory device with band-gap-engineered storage node

Seongjae Cho, Won Bo Shim, Yoon Kim, Jang Gn Yun, Jong Duk Lee, Hyungcheol Shin, Jong Ho Lee, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A charge trap folded nand (Fnand ) Flash memory device with band-gap-engineered (BE) storage node is proposed. Because of the compact cell layout without junction contacts, a nand Flash memory is the most suitable memory medium for electronic appliances. Two memory cells are put together to have a common vertical channel, which enables one to achieve a theoretical near-30-nm technology. The resulting array is made by folding the conventional 2-D Flash memory and is called Fnand. The memory storage node uses a BE stack structure, where the oxidenitrideoxide multilayers replace the tunnel oxide. The fin structures for both wordline and bitline have been formed by sidewall spacer patterning, instead of photolithography. The fabrication processes for SONONOS nand Flash memory having independent double gates are explained. Electrical characteristics regarding memory operations under paired cell interference are analyzed.

Original languageEnglish
Article number5643136
Pages (from-to)288-295
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume58
Issue number2
DOIs
StatePublished - Feb 2011

Keywords

  • Band-gap engineering
  • charge trap
  • double gate
  • flash memory
  • folded nand (F nand)
  • paired cell interference (PCI)
  • sidewall spacer patterning

Fingerprint

Dive into the research topics of 'A charge trap folded nand flash memory device with band-gap-engineered storage node'. Together they form a unique fingerprint.

Cite this