A compact model for channel coupling in sub-30nm NAND flash memory device

Myounggon Kang; Wookghee Hahn; Il Han Park; Youngsun Song; Hocheol Lee; Kihwan Choi; Youngho Lim; Sung Min Joe; Dong Hyuk Chae; Hyungcheol Shin

doi:10.1143/JJAP.50.100204

A compact model for channel coupling in sub-30nm NAND flash memory device

Myounggon Kang, Wookghee Hahn, Il Han Park, Youngsun Song, Hocheol Lee, Kihwan Choi, Youngho Lim, Sung Min Joe, Dong Hyuk Chae, Hyungcheol Shin

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

This paper presents an analytic model for NAND flash array where channel coupling embodies. Channel coupling effect which is becoming a more serious issue in developing high-density flash memory devices should be effectively suppressed. By applying the coupling model to a 30-nm NAND flash product, the simulation showed a good agreement with the measurement results. Also, complex problems in scaled NAND flash memories could be accurately explained by circuit simulations. This evaluation will be useful in developing high-density multi-level cell (MLC) NAND flash technologies.

Original language	English
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	50
Issue number	10 PART 1
DOIs	https://doi.org/10.1143/JJAP.50.100204
State	Published - Oct 2011

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title = "A compact model for channel coupling in sub-30nm NAND flash memory device",

abstract = "This paper presents an analytic model for NAND flash array where channel coupling embodies. Channel coupling effect which is becoming a more serious issue in developing high-density flash memory devices should be effectively suppressed. By applying the coupling model to a 30-nm NAND flash product, the simulation showed a good agreement with the measurement results. Also, complex problems in scaled NAND flash memories could be accurately explained by circuit simulations. This evaluation will be useful in developing high-density multi-level cell (MLC) NAND flash technologies.",

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AU - Hahn, Wookghee

AU - Park, Il Han

AU - Song, Youngsun

AU - Lee, Hocheol

AU - Choi, Kihwan

AU - Lim, Youngho

AU - Joe, Sung Min

AU - Chae, Dong Hyuk

AU - Shin, Hyungcheol

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N2 - This paper presents an analytic model for NAND flash array where channel coupling embodies. Channel coupling effect which is becoming a more serious issue in developing high-density flash memory devices should be effectively suppressed. By applying the coupling model to a 30-nm NAND flash product, the simulation showed a good agreement with the measurement results. Also, complex problems in scaled NAND flash memories could be accurately explained by circuit simulations. This evaluation will be useful in developing high-density multi-level cell (MLC) NAND flash technologies.

AB - This paper presents an analytic model for NAND flash array where channel coupling embodies. Channel coupling effect which is becoming a more serious issue in developing high-density flash memory devices should be effectively suppressed. By applying the coupling model to a 30-nm NAND flash product, the simulation showed a good agreement with the measurement results. Also, complex problems in scaled NAND flash memories could be accurately explained by circuit simulations. This evaluation will be useful in developing high-density multi-level cell (MLC) NAND flash technologies.

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IS - 10 PART 1

ER -

A compact model for channel coupling in sub-30nm NAND flash memory device

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