A compact model for channel coupling in sub-30nm NAND flash memory device

Myounggon Kang; Wookghee Hahn; Il Han Park; Youngsun Song; Hocheol Lee; Kihwan Choi; Youngho Lim; Sung Min Joe; Dong Hyuk Chae; Hyungcheol Shin

doi:10.1143/JJAP.50.100204

A compact model for channel coupling in sub-30nm NAND flash memory device

Myounggon Kang
, Wookghee Hahn
, Il Han Park
, Youngsun Song
, Hocheol Lee
, Kihwan Choi
, Youngho Lim
, Sung Min Joe
, Dong Hyuk Chae
, Hyungcheol Shin

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

This paper presents an analytic model for NAND flash array where channel coupling embodies. Channel coupling effect which is becoming a more serious issue in developing high-density flash memory devices should be effectively suppressed. By applying the coupling model to a 30-nm NAND flash product, the simulation showed a good agreement with the measurement results. Also, complex problems in scaled NAND flash memories could be accurately explained by circuit simulations. This evaluation will be useful in developing high-density multi-level cell (MLC) NAND flash technologies.

Original language	English
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	50
Issue number	10 PART 1
DOIs	https://doi.org/10.1143/JJAP.50.100204
State	Published - Oct 2011

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title = "A compact model for channel coupling in sub-30nm NAND flash memory device",

abstract = "This paper presents an analytic model for NAND flash array where channel coupling embodies. Channel coupling effect which is becoming a more serious issue in developing high-density flash memory devices should be effectively suppressed. By applying the coupling model to a 30-nm NAND flash product, the simulation showed a good agreement with the measurement results. Also, complex problems in scaled NAND flash memories could be accurately explained by circuit simulations. This evaluation will be useful in developing high-density multi-level cell (MLC) NAND flash technologies.",

author = "Myounggon Kang and Wookghee Hahn and Park, \{Il Han\} and Youngsun Song and Hocheol Lee and Kihwan Choi and Youngho Lim and Joe, \{Sung Min\} and Chae, \{Dong Hyuk\} and Hyungcheol Shin",

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AU - Hahn, Wookghee

AU - Park, Il Han

AU - Song, Youngsun

AU - Lee, Hocheol

AU - Choi, Kihwan

AU - Lim, Youngho

AU - Joe, Sung Min

AU - Chae, Dong Hyuk

AU - Shin, Hyungcheol

PY - 2011/10

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N2 - This paper presents an analytic model for NAND flash array where channel coupling embodies. Channel coupling effect which is becoming a more serious issue in developing high-density flash memory devices should be effectively suppressed. By applying the coupling model to a 30-nm NAND flash product, the simulation showed a good agreement with the measurement results. Also, complex problems in scaled NAND flash memories could be accurately explained by circuit simulations. This evaluation will be useful in developing high-density multi-level cell (MLC) NAND flash technologies.

AB - This paper presents an analytic model for NAND flash array where channel coupling embodies. Channel coupling effect which is becoming a more serious issue in developing high-density flash memory devices should be effectively suppressed. By applying the coupling model to a 30-nm NAND flash product, the simulation showed a good agreement with the measurement results. Also, complex problems in scaled NAND flash memories could be accurately explained by circuit simulations. This evaluation will be useful in developing high-density multi-level cell (MLC) NAND flash technologies.

UR - https://www.scopus.com/pages/publications/80054963755

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M3 - Article

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JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 10 PART 1

ER -

A compact model for channel coupling in sub-30nm NAND flash memory device

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