@inproceedings{dfccf9f9a33d456ca02a4c8b067dc721,
title = "A direct observation on the structure evolution of memory-switching phenomena using in-situ TEM",
abstract = "This paper presents a real-time observation on microstructure evolution under electrical programming pulses directly on phase-change memory cells developed with 90-nm technology for the first time. The feasibility of this in-situ TEM experiment was successfully confirmed through the observed memory-switching behavior, and it was found that slow quenching crystallization enhanced the grain growth rather than the nucleation mechanism.",
author = "Cha Dongkyu and Su, {Jin Ahn} and Park, {S. Y.} and H. Horii and Kim, {D. H.} and Kim, {Y. K.} and Park, {S. O.} and U, {In Jung} and Kim, {Moon J.} and Kim Jiyoung",
year = "2009",
language = "English",
isbn = "9784863480094",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "204--205",
booktitle = "2009 Symposium on VLSI Technology, VLSIT 2009",
note = "2009 Symposium on VLSI Technology, VLSIT 2009 ; Conference date: 16-06-2009 Through 18-06-2009",
}