A fully performance compatible 45 nm 4-gigabit three dimensional double-stacked multi-level NAND flash memory with shared bit-line structure
- Ki Tae Park
- , Myounggon Kang
- , Soonwook Hwang
- , Doogon Kim
- , Hoosung Cho
- , Youngwook Jeong
- , Yong Il Seo
- , Jaehoon Jang
- , Han Soo Kim
- , Yeong Taek Lee
- , Soon Moon Jung
- , Changhyun Kim
- Samsung
Research output: Contribution to journal › Article › peer-review
20
Scopus
citations