A gated twin-bit (GTB) nonvolatile memory device and its fabrication method

Seongjae Cho; Il Han Park; Yoon Kim; Se Hwan Park; Jong Duk Lee; Hyungcheol Shin; Byung Gook Park

doi:10.1109/TNANO.2009.2019641

A gated twin-bit (GTB) nonvolatile memory device and its fabrication method

Seongjae Cho, Il Han Park, Yoon Kim, Se Hwan Park, Jong Duk Lee, Hyungcheol Shin, Byung Gook Park

School of Electrical and Computer Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this study, a nonvolatile memory (NVM) device of novel structure in three-dimension is introduced and validated. It is based on a pillar structure where two memory nodes commonly reside. The storage nodes are controlled by a single control gate so that spaces between silicon pillars can be reduced, in which additional gates called cutoff gates realize perfect operations. Gated twin-bit (GTB) NVM device is considered as the ultimate form of 3-D NVM device based on double-gate structure in a sense that the use of common gate makes maximal integration possible. The operation schemes and fabrication method of the GTB NVM device are also introduced.

Original language	English
Article number	4810110
Pages (from-to)	595-602
Number of pages	8
Journal	IEEE Transactions on Nanotechnology
Volume	8
Issue number	5
DOIs	https://doi.org/10.1109/TNANO.2009.2019641
State	Published - Sep 2009

Keywords

3-D nonvolatile memory (NVM) device
Cutoff gate
Double-gate structure
Gated twin-bit (GTB)
Pillar structure

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10.1109/TNANO.2009.2019641

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abstract = "In this study, a nonvolatile memory (NVM) device of novel structure in three-dimension is introduced and validated. It is based on a pillar structure where two memory nodes commonly reside. The storage nodes are controlled by a single control gate so that spaces between silicon pillars can be reduced, in which additional gates called cutoff gates realize perfect operations. Gated twin-bit (GTB) NVM device is considered as the ultimate form of 3-D NVM device based on double-gate structure in a sense that the use of common gate makes maximal integration possible. The operation schemes and fabrication method of the GTB NVM device are also introduced.",

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AU - Shin, Hyungcheol

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A gated twin-bit (GTB) nonvolatile memory device and its fabrication method

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Keywords

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