A large bandgap shift in InGaAs(P)/InP multi-quantum well structure obtained by impurity-free vacancy diffusion using SiO2 capping and its application to photodetectors

Sang Kee Si; Sung June Kim; Ju Han Lee; Deok Ho Yeo; Kyung Hun Yoon

doi:10.1117/12.304469

A large bandgap shift in InGaAs(P)/InP multi-quantum well structure obtained by impurity-free vacancy diffusion using SiO₂ capping and its application to photodetectors

Sang Kee Si, Sung June Kim, Ju Han Lee, Deok Ho Yeo, Kyung Hun Yoon

School of Electrical and Computer Engineering

Seoul National University

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper, we have investigated the bandgap tuning in the InGaAs (P)/ InP multiquantum well (MQW) structure obtained by impurity-free vacancy diffusion (IFVD) using low temperature photoluminescence (PL). The MQW intermixing was performed in a rapid thermal annealer (RTA) using the dielectric capping materials, SiO₂ and SiN_x. The SiO₂ capping was successfully used with InGaAs cap layer to cause a large bandgap tuning effect in the InGaAs/InP MQW material. The blue shift of bandgap energy after RTA treatment was as much as 185 and 230 meV at 750°C and 850 °C, respectively, with its value controllable using annealing time and temperature. Samples with SiO₂-InP or SiN_x-InGaAs cap layer combinations, on the other hand, did not show any significant energy shifts. The absorption spectra taken from the same samples confimed the energy shifts obtained using PL. The process developed can be readily applied to fabrication of photodetectors that are sensitive to wavelength and/or polarization.

Original language	English
Pages (from-to)	88-95
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3287
DOIs	https://doi.org/10.1117/12.304469
State	Published - 1998
Event	Photodetectors: Materials and Devices III - San Jose, CA, United States Duration: 28 Jan 1998 → 30 Jan 1998

Keywords

Absorption
Bandgap tuning
Demultiplexer
Impurity - free vacancy diffusion (IFVD)
Impurity-induced disordering (IID)
InGaAs/InP multi quantum wells (MQW's)
Optoelectronic devices
Photodetectors
Quantum well intermixing
Self-interdiffusion

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@article{6c5970e3c76746479395074256d89c08,

title = "A large bandgap shift in InGaAs(P)/InP multi-quantum well structure obtained by impurity-free vacancy diffusion using SiO2 capping and its application to photodetectors",

abstract = "In this paper, we have investigated the bandgap tuning in the InGaAs (P)/ InP multiquantum well (MQW) structure obtained by impurity-free vacancy diffusion (IFVD) using low temperature photoluminescence (PL). The MQW intermixing was performed in a rapid thermal annealer (RTA) using the dielectric capping materials, SiO2 and SiNx. The SiO2 capping was successfully used with InGaAs cap layer to cause a large bandgap tuning effect in the InGaAs/InP MQW material. The blue shift of bandgap energy after RTA treatment was as much as 185 and 230 meV at 750°C and 850 °C, respectively, with its value controllable using annealing time and temperature. Samples with SiO2-InP or SiNx-InGaAs cap layer combinations, on the other hand, did not show any significant energy shifts. The absorption spectra taken from the same samples confimed the energy shifts obtained using PL. The process developed can be readily applied to fabrication of photodetectors that are sensitive to wavelength and/or polarization.",

keywords = "Absorption, Bandgap tuning, Demultiplexer, Impurity - free vacancy diffusion (IFVD), Impurity-induced disordering (IID), InGaAs/InP multi quantum wells (MQW's), Optoelectronic devices, Photodetectors, Quantum well intermixing, Self-interdiffusion",

author = "Si, {Sang Kee} and Kim, {Sung June} and Lee, {Ju Han} and Yeo, {Deok Ho} and Yoon, {Kyung Hun}",

year = "1998",

doi = "10.1117/12.304469",

language = "English",

volume = "3287",

pages = "88--95",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Photodetectors: Materials and Devices III ; Conference date: 28-01-1998 Through 30-01-1998",

}

A large bandgap shift in InGaAs(P)/InP multi-quantum well structure obtained by impurity-free vacancy diffusion using SiO₂ capping and its application to photodetectors. / Si, Sang Kee; Kim, Sung June; Lee, Ju Han et al.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3287, 1998, p. 88-95.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - A large bandgap shift in InGaAs(P)/InP multi-quantum well structure obtained by impurity-free vacancy diffusion using SiO2 capping and its application to photodetectors

AU - Si, Sang Kee

AU - Kim, Sung June

AU - Lee, Ju Han

AU - Yeo, Deok Ho

AU - Yoon, Kyung Hun

PY - 1998

Y1 - 1998

N2 - In this paper, we have investigated the bandgap tuning in the InGaAs (P)/ InP multiquantum well (MQW) structure obtained by impurity-free vacancy diffusion (IFVD) using low temperature photoluminescence (PL). The MQW intermixing was performed in a rapid thermal annealer (RTA) using the dielectric capping materials, SiO2 and SiNx. The SiO2 capping was successfully used with InGaAs cap layer to cause a large bandgap tuning effect in the InGaAs/InP MQW material. The blue shift of bandgap energy after RTA treatment was as much as 185 and 230 meV at 750°C and 850 °C, respectively, with its value controllable using annealing time and temperature. Samples with SiO2-InP or SiNx-InGaAs cap layer combinations, on the other hand, did not show any significant energy shifts. The absorption spectra taken from the same samples confimed the energy shifts obtained using PL. The process developed can be readily applied to fabrication of photodetectors that are sensitive to wavelength and/or polarization.

AB - In this paper, we have investigated the bandgap tuning in the InGaAs (P)/ InP multiquantum well (MQW) structure obtained by impurity-free vacancy diffusion (IFVD) using low temperature photoluminescence (PL). The MQW intermixing was performed in a rapid thermal annealer (RTA) using the dielectric capping materials, SiO2 and SiNx. The SiO2 capping was successfully used with InGaAs cap layer to cause a large bandgap tuning effect in the InGaAs/InP MQW material. The blue shift of bandgap energy after RTA treatment was as much as 185 and 230 meV at 750°C and 850 °C, respectively, with its value controllable using annealing time and temperature. Samples with SiO2-InP or SiNx-InGaAs cap layer combinations, on the other hand, did not show any significant energy shifts. The absorption spectra taken from the same samples confimed the energy shifts obtained using PL. The process developed can be readily applied to fabrication of photodetectors that are sensitive to wavelength and/or polarization.

KW - Absorption

KW - Bandgap tuning

KW - Demultiplexer

KW - Impurity - free vacancy diffusion (IFVD)

KW - Impurity-induced disordering (IID)

KW - InGaAs/InP multi quantum wells (MQW's)

KW - Optoelectronic devices

KW - Photodetectors

KW - Quantum well intermixing

KW - Self-interdiffusion

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U2 - 10.1117/12.304469

DO - 10.1117/12.304469

M3 - Conference article

AN - SCOPUS:0032223999

SN - 0277-786X

VL - 3287

SP - 88

EP - 95

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Photodetectors: Materials and Devices III

Y2 - 28 January 1998 through 30 January 1998

ER -

A large bandgap shift in InGaAs(P)/InP multi-quantum well structure obtained by impurity-free vacancy diffusion using SiO₂ capping and its application to photodetectors

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Keywords

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