A large bandgap shift in InGaAs(P)/InP multi-quantum well structure obtained by impurity-free vacancy diffusion using SiO2 capping and its application to photodetectors
- Sang Kee Si
- , Sung June Kim
- , Ju Han Lee
- , Deok Ho Yeo
- , Kyung Hun Yoon
- Seoul National University
Research output: Contribution to journal › Conference article › peer-review