A low power and area scalable high voltage switch technique for low operation voltage in MLC NAND flash memory

Myounggon Kang; Ki Tae Park; Youngsun Song; Sungsoo Lee; Yunheub Song; Young Ho Lim

doi:10.1587/transele.E93.C.182

A low power and area scalable high voltage switch technique for low operation voltage in MLC NAND flash memory

Myounggon Kang, Ki Tae Park, Youngsun Song, Sungsoo Lee, Yunheub Song, Young Ho Lim

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

Abstract

A new low voltage operation of high voltage switching technique, which is capable of reducing leakage current by an order of three compared to conventional circuits, has been developed for sub-1.8V low voltage mobile NAND flash memory. In addition, by using the proposed high voltage switch, chip size scaling can be realized due to reduced a minimum required space between the N-wells of selected and unselected blocks for isolation. The proposed scheme is essential to achieve low power operation NAND Flash memory, especially for mobile electronics.

Original language	English
Pages (from-to)	182-186
Number of pages	5
Journal	IEICE Transactions on Electronics
Volume	E93-C
Issue number	2
DOIs	https://doi.org/10.1587/transele.E93.C.182
State	Published - 2010

Keywords

Area scaling
FLASH
High voltage switch
Low power
Low voltage
NAND
Row decoder

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10.1587/transele.E93.C.182

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abstract = "A new low voltage operation of high voltage switching technique, which is capable of reducing leakage current by an order of three compared to conventional circuits, has been developed for sub-1.8V low voltage mobile NAND flash memory. In addition, by using the proposed high voltage switch, chip size scaling can be realized due to reduced a minimum required space between the N-wells of selected and unselected blocks for isolation. The proposed scheme is essential to achieve low power operation NAND Flash memory, especially for mobile electronics.",

keywords = "Area scaling, FLASH, High voltage switch, Low power, Low voltage, NAND, Row decoder",

author = "Myounggon Kang and Park, \{Ki Tae\} and Youngsun Song and Sungsoo Lee and Yunheub Song and Lim, \{Young Ho\}",

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AU - Kang, Myounggon

AU - Park, Ki Tae

AU - Song, Youngsun

AU - Lee, Sungsoo

AU - Song, Yunheub

AU - Lim, Young Ho

PY - 2010

Y1 - 2010

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AB - A new low voltage operation of high voltage switching technique, which is capable of reducing leakage current by an order of three compared to conventional circuits, has been developed for sub-1.8V low voltage mobile NAND flash memory. In addition, by using the proposed high voltage switch, chip size scaling can be realized due to reduced a minimum required space between the N-wells of selected and unselected blocks for isolation. The proposed scheme is essential to achieve low power operation NAND Flash memory, especially for mobile electronics.

KW - Area scaling

KW - FLASH

KW - High voltage switch

KW - Low power

KW - Low voltage

KW - NAND

KW - Row decoder

UR - https://www.scopus.com/pages/publications/77950451602

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JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 2

ER -

A low power and area scalable high voltage switch technique for low operation voltage in MLC NAND flash memory

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