TY - GEN
T1 - A MEMS-type micro sensor for hydrogen gas detection
AU - Yoon, J. H.
AU - Kim, B. J.
AU - Kim, J. S.
PY - 2012
Y1 - 2012
N2 - In this study, a highly sensitive hydrogen gas sensor of the multi-layer and micro-heater type was designed and fabricated using a microelectromechanical system (MEMS) process. The dimension of fabricated hydrogen gas sensor was 5 mmx4 mm and the sensing layer of palladium was deposited in the middle of the device. The sensitivity (R s) was 0.271, 0.378 and 0.638% at the hydrogen concentrations of 500, 1,000 and 2,000 ppm, respectively. Also, the gas sensitivity showed a good positive linearity with the increase of hydrogen concentration. The effect on the insertion of anodic aluminum oxide (AAO) layer under the Pd-thin film was investigated. The sensitivity for the Pd-AAO layer was about 0.373, 0.532 and 0.783% at hydrogen concentrations of 500, 1,000 and 2,000 ppm, respectively. The sensitivity of the Pd-AAO layer improved with respect to the pure Pd-thin film due to the nanoporous nature of AAO.
AB - In this study, a highly sensitive hydrogen gas sensor of the multi-layer and micro-heater type was designed and fabricated using a microelectromechanical system (MEMS) process. The dimension of fabricated hydrogen gas sensor was 5 mmx4 mm and the sensing layer of palladium was deposited in the middle of the device. The sensitivity (R s) was 0.271, 0.378 and 0.638% at the hydrogen concentrations of 500, 1,000 and 2,000 ppm, respectively. Also, the gas sensitivity showed a good positive linearity with the increase of hydrogen concentration. The effect on the insertion of anodic aluminum oxide (AAO) layer under the Pd-thin film was investigated. The sensitivity for the Pd-AAO layer was about 0.373, 0.532 and 0.783% at hydrogen concentrations of 500, 1,000 and 2,000 ppm, respectively. The sensitivity of the Pd-AAO layer improved with respect to the pure Pd-thin film due to the nanoporous nature of AAO.
KW - Anodic aluminum oxide
KW - Hydrogen sensor
KW - MEMS
KW - Palladium
KW - Thin film
UR - http://www.scopus.com/inward/record.url?scp=84864925227&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84864925227
SN - 9781466562752
T3 - Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
SP - 114
EP - 117
BT - Nanotechnology 2012
T2 - Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Y2 - 18 June 2012 through 21 June 2012
ER -