A Monolithic GaAs Receiver for Optical Interconnect Systems

Joongho Choi, Oscal T.C. Chen

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


A monolithic GaAs optical receiver which includes the photodetector and preamplifier was designed and fabricated using a common 1.0-µm gallium-arsenide MESFET technology. The optical receiver operates at the data rate of 1 Gb/s. The transimpedance value can be continuously tuned from 1 to 10 kΩ. The metal-semiconductor-metal photodiode shows a 35% efficiency. Several design factors are considered to achieve high-bandwidth and low-noise operation. An array of the integrated receivers can be compactly implemented in a single chip for high-speed interconnection networks and photonic signal processing.

Original languageEnglish
Pages (from-to)328-331
Number of pages4
JournalIEEE Journal of Solid-State Circuits
Issue number3
StatePublished - Mar 1994


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