Abstract
A monolithic GaAs optical receiver which includes the photodetector and preamplifier was designed and fabricated using a common 1.0-µm gallium-arsenide MESFET technology. The optical receiver operates at the data rate of 1 Gb/s. The transimpedance value can be continuously tuned from 1 to 10 kΩ. The metal-semiconductor-metal photodiode shows a 35% efficiency. Several design factors are considered to achieve high-bandwidth and low-noise operation. An array of the integrated receivers can be compactly implemented in a single chip for high-speed interconnection networks and photonic signal processing.
Original language | English |
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Pages (from-to) | 328-331 |
Number of pages | 4 |
Journal | IEEE Journal of Solid-State Circuits |
Volume | 29 |
Issue number | 3 |
DOIs | |
State | Published - Mar 1994 |