A Monolithic GaAs Receiver for Optical Interconnect Systems

Joongho Choi; Oscal T.C. Chen

doi:10.1109/4.278357

A Monolithic GaAs Receiver for Optical Interconnect Systems

Joongho Choi, Oscal T.C. Chen

School of Electrical and Computer Engineering

University of Southern California

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A monolithic GaAs optical receiver which includes the photodetector and preamplifier was designed and fabricated using a common 1.0-µm gallium-arsenide MESFET technology. The optical receiver operates at the data rate of 1 Gb/s. The transimpedance value can be continuously tuned from 1 to 10 kΩ. The metal-semiconductor-metal photodiode shows a 35% efficiency. Several design factors are considered to achieve high-bandwidth and low-noise operation. An array of the integrated receivers can be compactly implemented in a single chip for high-speed interconnection networks and photonic signal processing.

Original language	English
Pages (from-to)	328-331
Number of pages	4
Journal	IEEE Journal of Solid-State Circuits
Volume	29
Issue number	3
DOIs	https://doi.org/10.1109/4.278357
State	Published - Mar 1994

Access to Document

10.1109/4.278357

Cite this

@article{cbf6da58f3b74bee92f9ee147ceb86a0,

title = "A Monolithic GaAs Receiver for Optical Interconnect Systems",

abstract = "A monolithic GaAs optical receiver which includes the photodetector and preamplifier was designed and fabricated using a common 1.0-µm gallium-arsenide MESFET technology. The optical receiver operates at the data rate of 1 Gb/s. The transimpedance value can be continuously tuned from 1 to 10 kΩ. The metal-semiconductor-metal photodiode shows a 35\% efficiency. Several design factors are considered to achieve high-bandwidth and low-noise operation. An array of the integrated receivers can be compactly implemented in a single chip for high-speed interconnection networks and photonic signal processing.",

author = "Joongho Choi and Chen, \{Oscal T.C.\}",

year = "1994",

month = mar,

doi = "10.1109/4.278357",

language = "English",

volume = "29",

pages = "328--331",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - A Monolithic GaAs Receiver for Optical Interconnect Systems

AU - Choi, Joongho

AU - Chen, Oscal T.C.

PY - 1994/3

Y1 - 1994/3

N2 - A monolithic GaAs optical receiver which includes the photodetector and preamplifier was designed and fabricated using a common 1.0-µm gallium-arsenide MESFET technology. The optical receiver operates at the data rate of 1 Gb/s. The transimpedance value can be continuously tuned from 1 to 10 kΩ. The metal-semiconductor-metal photodiode shows a 35% efficiency. Several design factors are considered to achieve high-bandwidth and low-noise operation. An array of the integrated receivers can be compactly implemented in a single chip for high-speed interconnection networks and photonic signal processing.

AB - A monolithic GaAs optical receiver which includes the photodetector and preamplifier was designed and fabricated using a common 1.0-µm gallium-arsenide MESFET technology. The optical receiver operates at the data rate of 1 Gb/s. The transimpedance value can be continuously tuned from 1 to 10 kΩ. The metal-semiconductor-metal photodiode shows a 35% efficiency. Several design factors are considered to achieve high-bandwidth and low-noise operation. An array of the integrated receivers can be compactly implemented in a single chip for high-speed interconnection networks and photonic signal processing.

UR - https://www.scopus.com/pages/publications/0028384569

U2 - 10.1109/4.278357

DO - 10.1109/4.278357

M3 - Article

AN - SCOPUS:0028384569

SN - 0018-9200

VL - 29

SP - 328

EP - 331

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 3

ER -

A Monolithic GaAs Receiver for Optical Interconnect Systems

Abstract

Access to Document

Other files and links

Fingerprint

Cite this