A new programming method to alleviate the program speed variation in three-dimensional stacked array NAND flash memory

Yoon Kim; Joo Yun Seo; Sang Ho Lee; Byung Gook Park

doi:10.5573/JSTS.2014.14.5.566

A new programming method to alleviate the program speed variation in three-dimensional stacked array NAND flash memory

Yoon Kim, Joo Yun Seo, Sang Ho Lee, Byung Gook Park

School of Electrical and Computer Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Channel-stacked 3D NAND flash memory is very promising candidate for the next-generation NAND flash memory. However, there is an inherent issue on cell size variation between stacked channels due to the declined etch slope. In this paper, the effect of the cell variation on the incremental step pulse programming (ISPP) characteristics is studied with 3D TCAD simulation. The ISPP slope degradation of elliptical channel is investigated. To solve that problem, a new programming method is proposed, and we can alleviate the V_Tvariation among cells and reduce the total programming time.

Original language	English
Pages (from-to)	566-571
Number of pages	6
Journal	Journal of Semiconductor Technology and Science
Volume	14
Issue number	5
DOIs	https://doi.org/10.5573/JSTS.2014.14.5.566
State	Published - 1 Oct 2014

Keywords

3D NAND flash
Elliptical nanowire
ISPP
SONOS nanowire
Stacked array(STAR)

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10.5573/JSTS.2014.14.5.566

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@article{3720a84c532c4e9b88367ce1ef2146f9,

title = "A new programming method to alleviate the program speed variation in three-dimensional stacked array NAND flash memory",

abstract = "Channel-stacked 3D NAND flash memory is very promising candidate for the next-generation NAND flash memory. However, there is an inherent issue on cell size variation between stacked channels due to the declined etch slope. In this paper, the effect of the cell variation on the incremental step pulse programming (ISPP) characteristics is studied with 3D TCAD simulation. The ISPP slope degradation of elliptical channel is investigated. To solve that problem, a new programming method is proposed, and we can alleviate the VTvariation among cells and reduce the total programming time.",

keywords = "3D NAND flash, Elliptical nanowire, ISPP, SONOS nanowire, Stacked array(STAR)",

author = "Yoon Kim and Seo, {Joo Yun} and Lee, {Sang Ho} and Park, {Byung Gook}",

year = "2014",

month = oct,

day = "1",

doi = "10.5573/JSTS.2014.14.5.566",

language = "English",

volume = "14",

pages = "566--571",

journal = "Journal of Semiconductor Technology and Science",

issn = "1598-1657",

publisher = "Institute of Electronics Engineers of Korea",

number = "5",

}

TY - JOUR

T1 - A new programming method to alleviate the program speed variation in three-dimensional stacked array NAND flash memory

AU - Kim, Yoon

AU - Seo, Joo Yun

AU - Lee, Sang Ho

AU - Park, Byung Gook

PY - 2014/10/1

Y1 - 2014/10/1

N2 - Channel-stacked 3D NAND flash memory is very promising candidate for the next-generation NAND flash memory. However, there is an inherent issue on cell size variation between stacked channels due to the declined etch slope. In this paper, the effect of the cell variation on the incremental step pulse programming (ISPP) characteristics is studied with 3D TCAD simulation. The ISPP slope degradation of elliptical channel is investigated. To solve that problem, a new programming method is proposed, and we can alleviate the VTvariation among cells and reduce the total programming time.

AB - Channel-stacked 3D NAND flash memory is very promising candidate for the next-generation NAND flash memory. However, there is an inherent issue on cell size variation between stacked channels due to the declined etch slope. In this paper, the effect of the cell variation on the incremental step pulse programming (ISPP) characteristics is studied with 3D TCAD simulation. The ISPP slope degradation of elliptical channel is investigated. To solve that problem, a new programming method is proposed, and we can alleviate the VTvariation among cells and reduce the total programming time.

KW - 3D NAND flash

KW - Elliptical nanowire

KW - ISPP

KW - SONOS nanowire

KW - Stacked array(STAR)

UR - http://www.scopus.com/inward/record.url?scp=84908342571&partnerID=8YFLogxK

U2 - 10.5573/JSTS.2014.14.5.566

DO - 10.5573/JSTS.2014.14.5.566

M3 - Article

AN - SCOPUS:84908342571

SN - 1598-1657

VL - 14

SP - 566

EP - 571

JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

IS - 5

ER -

A new programming method to alleviate the program speed variation in three-dimensional stacked array NAND flash memory

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Keywords

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