A recessed-channel tunnel field-effect transistor (RTFET) with the asymmetric source and drain

Hui Tae Kwon; Sang Wan Kim; Won Joo Lee; Dae Hoon Wee; Yoon Kim

doi:10.5573/JSTS.2016.16.5.635

A recessed-channel tunnel field-effect transistor (RTFET) with the asymmetric source and drain

Hui Tae Kwon, Sang Wan Kim, Won Joo Lee, Dae Hoon Wee, Yoon Kim

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Tunnel field-effect transistor (TFET) is a promising candidate for the next-generation electron device. However, technical issues remain for their practical application: poor current drivability, shortchannel effect and ambipolar behavior. We propose herein a novel recessed-channel TFET (RTFET) with the asymmetric source and drain. The specific design parameters are determined by technology computeraided design (TCAD) simulation for high on-current and low S. The designed RTFET provides ~446´ higher on-current than a conventional planar TFET. And, its average value of the S is 63 mV/dec.

Original language	English
Pages (from-to)	635-640
Number of pages	6
Journal	Journal of Semiconductor Technology and Science
Volume	16
Issue number	5
DOIs	https://doi.org/10.5573/JSTS.2016.16.5.635
State	Published - Oct 2016

Keywords

Ambipolar
Recessed-channel TFET
Tunnel filed-effect transistor (TFET)

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10.5573/JSTS.2016.16.5.635

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abstract = "Tunnel field-effect transistor (TFET) is a promising candidate for the next-generation electron device. However, technical issues remain for their practical application: poor current drivability, shortchannel effect and ambipolar behavior. We propose herein a novel recessed-channel TFET (RTFET) with the asymmetric source and drain. The specific design parameters are determined by technology computeraided design (TCAD) simulation for high on-current and low S. The designed RTFET provides ~446´ higher on-current than a conventional planar TFET. And, its average value of the S is 63 mV/dec.",

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T1 - A recessed-channel tunnel field-effect transistor (RTFET) with the asymmetric source and drain

AU - Kwon, Hui Tae

AU - Kim, Sang Wan

AU - Lee, Won Joo

AU - Wee, Dae Hoon

AU - Kim, Yoon

PY - 2016/10

Y1 - 2016/10

N2 - Tunnel field-effect transistor (TFET) is a promising candidate for the next-generation electron device. However, technical issues remain for their practical application: poor current drivability, shortchannel effect and ambipolar behavior. We propose herein a novel recessed-channel TFET (RTFET) with the asymmetric source and drain. The specific design parameters are determined by technology computeraided design (TCAD) simulation for high on-current and low S. The designed RTFET provides ~446´ higher on-current than a conventional planar TFET. And, its average value of the S is 63 mV/dec.

AB - Tunnel field-effect transistor (TFET) is a promising candidate for the next-generation electron device. However, technical issues remain for their practical application: poor current drivability, shortchannel effect and ambipolar behavior. We propose herein a novel recessed-channel TFET (RTFET) with the asymmetric source and drain. The specific design parameters are determined by technology computeraided design (TCAD) simulation for high on-current and low S. The designed RTFET provides ~446´ higher on-current than a conventional planar TFET. And, its average value of the S is 63 mV/dec.

KW - Ambipolar

KW - Recessed-channel TFET

KW - Tunnel filed-effect transistor (TFET)

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JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

IS - 5

ER -

A recessed-channel tunnel field-effect transistor (RTFET) with the asymmetric source and drain

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Keywords

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