A simple compact model for hot carrier injection phenomenon in 32 nm NAND flash memory device

Myounggon Kang; Wookghee Hahn; Il Han Park; Hocheol Lee; Juyoung Park; Youngsun Song; Changgyu Eun; Sanghyun Ju; Kihwan Choi; Youngho Lim; Jong Ho Lee; Byung Gook Park; Hyungcheol Shin

doi:10.1109/EDSSC.2010.5713695

A simple compact model for hot carrier injection phenomenon in 32 nm NAND flash memory device

Myounggon Kang, Wookghee Hahn, Il Han Park, Hocheol Lee, Juyoung Park, Youngsun Song, Changgyu Eun, Sanghyun Ju, Kihwan Choi, Youngho Lim, Jong Ho Lee, Byung Gook Park, Hyungcheol Shin

School of Advanced Fusion Studies

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

In this work, a SPICE-friendly hot carrier injection (HCI) model for NAND flash memory has been proposed. By applying the HCI model to the 32 nm NAND product, the simulation based on HCI model showed good agreement with the measurement results. Based on the proposed model, a complex problem regarding the program disturbance in the scaled NAND flash memory array can be predicted through simple circuit simulations. Moreover, it is very useful in developing the ultra-short channel devices for high density multi-level cell (MLC) NAND flash technologies.

Original language	English
Title of host publication	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
DOIs	https://doi.org/10.1109/EDSSC.2010.5713695
State	Published - 2010
Event	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 - Hong Kong, China Duration: 15 Dec 2010 → 17 Dec 2010

Publication series

Name	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

Conference

Conference	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Country/Territory	China
City	Hong Kong
Period	15/12/10 → 17/12/10

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10.1109/EDSSC.2010.5713695

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Kang, M., Hahn, W., Park, I. H., Lee, H., Park, J., Song, Y., Eun, C., Ju, S., Choi, K., Lim, Y., Lee, J. H., Park, B. G., & Shin, H. (2010). A simple compact model for hot carrier injection phenomenon in 32 nm NAND flash memory device. In 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 Article 5713695 (2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010). https://doi.org/10.1109/EDSSC.2010.5713695

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title = "A simple compact model for hot carrier injection phenomenon in 32 nm NAND flash memory device",

abstract = "In this work, a SPICE-friendly hot carrier injection (HCI) model for NAND flash memory has been proposed. By applying the HCI model to the 32 nm NAND product, the simulation based on HCI model showed good agreement with the measurement results. Based on the proposed model, a complex problem regarding the program disturbance in the scaled NAND flash memory array can be predicted through simple circuit simulations. Moreover, it is very useful in developing the ultra-short channel devices for high density multi-level cell (MLC) NAND flash technologies.",

author = "Myounggon Kang and Wookghee Hahn and Park, {Il Han} and Hocheol Lee and Juyoung Park and Youngsun Song and Changgyu Eun and Sanghyun Ju and Kihwan Choi and Youngho Lim and Lee, {Jong Ho} and Park, {Byung Gook} and Hyungcheol Shin",

year = "2010",

doi = "10.1109/EDSSC.2010.5713695",

language = "English",

isbn = "9781424499977",

series = "2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010",

booktitle = "2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010",

note = "2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 ; Conference date: 15-12-2010 Through 17-12-2010",

}

Kang, M, Hahn, W, Park, IH, Lee, H, Park, J, Song, Y, Eun, C, Ju, S, Choi, K, Lim, Y, Lee, JH, Park, BG & Shin, H 2010, A simple compact model for hot carrier injection phenomenon in 32 nm NAND flash memory device. in 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010., 5713695, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, Hong Kong, China, 15/12/10. https://doi.org/10.1109/EDSSC.2010.5713695

A simple compact model for hot carrier injection phenomenon in 32 nm NAND flash memory device. / Kang, Myounggon; Hahn, Wookghee; Park, Il Han et al.
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010. 2010. 5713695 (2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - A simple compact model for hot carrier injection phenomenon in 32 nm NAND flash memory device

AU - Kang, Myounggon

AU - Hahn, Wookghee

AU - Park, Il Han

AU - Lee, Hocheol

AU - Park, Juyoung

AU - Song, Youngsun

AU - Eun, Changgyu

AU - Ju, Sanghyun

AU - Choi, Kihwan

AU - Lim, Youngho

AU - Lee, Jong Ho

AU - Park, Byung Gook

AU - Shin, Hyungcheol

PY - 2010

Y1 - 2010

N2 - In this work, a SPICE-friendly hot carrier injection (HCI) model for NAND flash memory has been proposed. By applying the HCI model to the 32 nm NAND product, the simulation based on HCI model showed good agreement with the measurement results. Based on the proposed model, a complex problem regarding the program disturbance in the scaled NAND flash memory array can be predicted through simple circuit simulations. Moreover, it is very useful in developing the ultra-short channel devices for high density multi-level cell (MLC) NAND flash technologies.

AB - In this work, a SPICE-friendly hot carrier injection (HCI) model for NAND flash memory has been proposed. By applying the HCI model to the 32 nm NAND product, the simulation based on HCI model showed good agreement with the measurement results. Based on the proposed model, a complex problem regarding the program disturbance in the scaled NAND flash memory array can be predicted through simple circuit simulations. Moreover, it is very useful in developing the ultra-short channel devices for high density multi-level cell (MLC) NAND flash technologies.

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DO - 10.1109/EDSSC.2010.5713695

M3 - Conference contribution

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SN - 9781424499977

T3 - 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

BT - 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

T2 - 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

Y2 - 15 December 2010 through 17 December 2010

ER -

Kang M, Hahn W, Park IH, Lee H, Park J, Song Y et al. A simple compact model for hot carrier injection phenomenon in 32 nm NAND flash memory device. In 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010. 2010. 5713695. (2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010). doi: 10.1109/EDSSC.2010.5713695

A simple compact model for hot carrier injection phenomenon in 32 nm NAND flash memory device

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