A SPICE-compatible new silicon nanowire field-effect transistors (SNWFETs) model

Se Han Lee, Yun Seop Yu, Sung Woo Hwang, Doyeol Ahn

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


Extraction of carrier mobilities of silicon nanowire FETs (SNWFETs) with Schottky source and drain contacts is performed using a newly developed compact model, which is suitable for efficient circuit simulation. The SNWFET model is based on an equivalent circuit including a Schottky diode model for two metalsemiconductor contacts and a SPICE LEVEL 3 MOSFET model for an intrinsic NW. The Schottky diode model is based on our recently developed Schottky diode model that includes thermionic field emission for reverse bias and thermionic emission mechanism for forward bias. It also includes a new analytical Schottky barrier height model dependent on the gate voltages as well as the drainsource voltages. The results simulated from the SNWFET model reproduce various, previously reported experimental results within 10% errors. The mobilities extracted from our model are compared with the mobility calculated without considering the Schottky contacts.

Original languageEnglish
Article number4810111
Pages (from-to)643-649
Number of pages7
JournalIEEE Transactions on Nanotechnology
Issue number5
StatePublished - Sep 2009


  • Barrier lowering effects
  • Nanowire (NW) FET
  • Schottky diode
  • Thermionic emission (TE)
  • Thermionic field emission (TFE)


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