A sub-0.5 V operating RF low noise amplifier using tunneling-FET

Hee Sauk Jhon; Jongwook Jeon; Myunggon Kang; Woo Young Choi

doi:10.7567/JJAP.56.020303

A sub-0.5 V operating RF low noise amplifier using tunneling-FET

Hee Sauk Jhon
, Jongwook Jeon
, Myunggon Kang
, Woo Young Choi

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

60 nm tunneling FET (TFET) based low noise amplifier (LNA) with a sub-0.5 V supply voltage for 2.4 GHz WSN application has been evaluated systematically from device level up to circuit level design. With the help of TFET's unique property of high subthreshold swing, it shows that substantial increase of gain performance was confirmed compared to that of conventional LNA using 60 nm bulk MOSFET at ultra-low voltage (ULV) condition. From the simulation study, TFET LNA at 0.4 V operating voltage has the gain of 15.1 dB and noise figure 50 of 3.5 dB while dissipating DC power consumption of 0.41 mW.

Original language	English
Article number	020303
Journal	Japanese Journal of Applied Physics
Volume	56
Issue number	2
DOIs	https://doi.org/10.7567/JJAP.56.020303
State	Published - Feb 2017

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title = "A sub-0.5 V operating RF low noise amplifier using tunneling-FET",

abstract = "60 nm tunneling FET (TFET) based low noise amplifier (LNA) with a sub-0.5 V supply voltage for 2.4 GHz WSN application has been evaluated systematically from device level up to circuit level design. With the help of TFET's unique property of high subthreshold swing, it shows that substantial increase of gain performance was confirmed compared to that of conventional LNA using 60 nm bulk MOSFET at ultra-low voltage (ULV) condition. From the simulation study, TFET LNA at 0.4 V operating voltage has the gain of 15.1 dB and noise figure 50 of 3.5 dB while dissipating DC power consumption of 0.41 mW.",

author = "Jhon, \{Hee Sauk\} and Jongwook Jeon and Myunggon Kang and Choi, \{Woo Young\}",

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AU - Jhon, Hee Sauk

AU - Jeon, Jongwook

AU - Kang, Myunggon

AU - Choi, Woo Young

PY - 2017/2

Y1 - 2017/2

N2 - 60 nm tunneling FET (TFET) based low noise amplifier (LNA) with a sub-0.5 V supply voltage for 2.4 GHz WSN application has been evaluated systematically from device level up to circuit level design. With the help of TFET's unique property of high subthreshold swing, it shows that substantial increase of gain performance was confirmed compared to that of conventional LNA using 60 nm bulk MOSFET at ultra-low voltage (ULV) condition. From the simulation study, TFET LNA at 0.4 V operating voltage has the gain of 15.1 dB and noise figure 50 of 3.5 dB while dissipating DC power consumption of 0.41 mW.

AB - 60 nm tunneling FET (TFET) based low noise amplifier (LNA) with a sub-0.5 V supply voltage for 2.4 GHz WSN application has been evaluated systematically from device level up to circuit level design. With the help of TFET's unique property of high subthreshold swing, it shows that substantial increase of gain performance was confirmed compared to that of conventional LNA using 60 nm bulk MOSFET at ultra-low voltage (ULV) condition. From the simulation study, TFET LNA at 0.4 V operating voltage has the gain of 15.1 dB and noise figure 50 of 3.5 dB while dissipating DC power consumption of 0.41 mW.

UR - https://www.scopus.com/pages/publications/85011551370

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DO - 10.7567/JJAP.56.020303

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 2

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ER -

A sub-0.5 V operating RF low noise amplifier using tunneling-FET

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