A vertical 4-bit SONOS flash memory and a unique 3-D vertical nor array structure

Yoon Kim; Il Han Park; Seongjae Cho; Jang Gn Yun; Jung Hoon Lee; Doo Hyun Kim; Gil Sung Lee; Se Hwan Park; Dong Hua Lee; Won Bo Sim; Wandong Kim; Hyungcheol Shin; Jong Duk Lee; Byung Gook Park

doi:10.1109/TNANO.2009.2026173

A vertical 4-bit SONOS flash memory and a unique 3-D vertical nor array structure

Yoon Kim, Il Han Park, Seongjae Cho, Jang Gn Yun, Jung Hoon Lee, Doo Hyun Kim, Gil Sung Lee, Se Hwan Park, Dong Hua Lee, Won Bo Sim, Wandong Kim, Hyungcheol Shin, Jong Duk Lee, Byung Gook Park

School of Electrical and Computer Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In order to overcome the limitation of a multibit siliconoxidenitrideoxidesilicon (SONOS) memory with multistorage nodes, we propose a unique 3-D vertical nor (U3VNOR) array architecture. The U3VNOR has a vertical channel so that it is possible to have a long enough channel without extra cell area. Therefore, we can avoid the problems such as redistribution of injected charges, second-bit effect, and short-channel effect. Also, it is the most integrated flash architecture having the smallest unit cell size, which is 1 F²/bit. In this paper, we present the fabrication method and the operation voltage scheme of the U3VNOR. In addition, through numerical simulation, we verify its program and erase characteristics. Due to its high density and reliable multibit operation, the U3VNOR is a promising structure for the future high-density nor flash memory.

Original language	English
Article number	5153353
Pages (from-to)	70-77
Number of pages	8
Journal	IEEE Transactions on Nanotechnology
Volume	9
Issue number	1
DOIs	https://doi.org/10.1109/TNANO.2009.2026173
State	Published - Jan 2010

Keywords

3-D array
Flash memory
Silicon-oxide-nitride-oxide-silicon (SONOS)
Vertical channel

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10.1109/TNANO.2009.2026173

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title = "A vertical 4-bit SONOS flash memory and a unique 3-D vertical nor array structure",

abstract = "In order to overcome the limitation of a multibit siliconoxidenitrideoxidesilicon (SONOS) memory with multistorage nodes, we propose a unique 3-D vertical nor (U3VNOR) array architecture. The U3VNOR has a vertical channel so that it is possible to have a long enough channel without extra cell area. Therefore, we can avoid the problems such as redistribution of injected charges, second-bit effect, and short-channel effect. Also, it is the most integrated flash architecture having the smallest unit cell size, which is 1 F2/bit. In this paper, we present the fabrication method and the operation voltage scheme of the U3VNOR. In addition, through numerical simulation, we verify its program and erase characteristics. Due to its high density and reliable multibit operation, the U3VNOR is a promising structure for the future high-density nor flash memory.",

keywords = "3-D array, Flash memory, Silicon-oxide-nitride-oxide-silicon (SONOS), Vertical channel",

author = "Yoon Kim and Park, {Il Han} and Seongjae Cho and Yun, {Jang Gn} and Lee, {Jung Hoon} and Kim, {Doo Hyun} and Lee, {Gil Sung} and Park, {Se Hwan} and Lee, {Dong Hua} and Sim, {Won Bo} and Wandong Kim and Hyungcheol Shin and Lee, {Jong Duk} and Park, {Byung Gook}",

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AU - Lee, Jung Hoon

AU - Kim, Doo Hyun

AU - Lee, Gil Sung

AU - Park, Se Hwan

AU - Lee, Dong Hua

AU - Sim, Won Bo

AU - Kim, Wandong

AU - Shin, Hyungcheol

AU - Lee, Jong Duk

AU - Park, Byung Gook

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N2 - In order to overcome the limitation of a multibit siliconoxidenitrideoxidesilicon (SONOS) memory with multistorage nodes, we propose a unique 3-D vertical nor (U3VNOR) array architecture. The U3VNOR has a vertical channel so that it is possible to have a long enough channel without extra cell area. Therefore, we can avoid the problems such as redistribution of injected charges, second-bit effect, and short-channel effect. Also, it is the most integrated flash architecture having the smallest unit cell size, which is 1 F2/bit. In this paper, we present the fabrication method and the operation voltage scheme of the U3VNOR. In addition, through numerical simulation, we verify its program and erase characteristics. Due to its high density and reliable multibit operation, the U3VNOR is a promising structure for the future high-density nor flash memory.

AB - In order to overcome the limitation of a multibit siliconoxidenitrideoxidesilicon (SONOS) memory with multistorage nodes, we propose a unique 3-D vertical nor (U3VNOR) array architecture. The U3VNOR has a vertical channel so that it is possible to have a long enough channel without extra cell area. Therefore, we can avoid the problems such as redistribution of injected charges, second-bit effect, and short-channel effect. Also, it is the most integrated flash architecture having the smallest unit cell size, which is 1 F2/bit. In this paper, we present the fabrication method and the operation voltage scheme of the U3VNOR. In addition, through numerical simulation, we verify its program and erase characteristics. Due to its high density and reliable multibit operation, the U3VNOR is a promising structure for the future high-density nor flash memory.

KW - 3-D array

KW - Flash memory

KW - Silicon-oxide-nitride-oxide-silicon (SONOS)

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A vertical 4-bit SONOS flash memory and a unique 3-D vertical nor array structure

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Keywords

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