A vertical 4-bit SONOS flash memory and a unique 3-D vertical nor array structure

Yoon Kim, Il Han Park, Seongjae Cho, Jang Gn Yun, Jung Hoon Lee, Doo Hyun Kim, Gil Sung Lee, Se Hwan Park, Dong Hua Lee, Won Bo Sim, Wandong Kim, Hyungcheol Shin, Jong Duk Lee, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


In order to overcome the limitation of a multibit siliconoxidenitrideoxidesilicon (SONOS) memory with multistorage nodes, we propose a unique 3-D vertical nor (U3VNOR) array architecture. The U3VNOR has a vertical channel so that it is possible to have a long enough channel without extra cell area. Therefore, we can avoid the problems such as redistribution of injected charges, second-bit effect, and short-channel effect. Also, it is the most integrated flash architecture having the smallest unit cell size, which is 1 F2/bit. In this paper, we present the fabrication method and the operation voltage scheme of the U3VNOR. In addition, through numerical simulation, we verify its program and erase characteristics. Due to its high density and reliable multibit operation, the U3VNOR is a promising structure for the future high-density nor flash memory.

Original languageEnglish
Article number5153353
Pages (from-to)70-77
Number of pages8
JournalIEEE Transactions on Nanotechnology
Issue number1
StatePublished - Jan 2010


  • 3-D array
  • Flash memory
  • Silicon-oxide-nitride-oxide-silicon (SONOS)
  • Vertical channel


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