TY - JOUR
T1 - Accurate Analysis of Schottky Barrier Height in Au/2H–MoTe2 Atomically Thin Film Contact
AU - Kim, Dong Min
AU - Kim, Sang il
AU - Kim, Tae Wan
N1 - Publisher Copyright:
© 2021, The Korean Institute of Metals and Materials.
PY - 2021/7
Y1 - 2021/7
N2 - Contact between two-dimensional (2D) transition metal dichalcogenides and certain metals (Au, Pd, Ti, or Pt) results in strong Fermi-level pinning and high resistance. Furthermore, to construct a high-performance device, accurate measurement of the contact resistance and Schottky barrier height (SBH) is crucial. In this study, the SBH and the resistance of a 2H phase few-layer molybdenum telluride (2H–MoTe2) film, which was grown by metal organic chemical vapor deposition, and a Ti/Au electrode were determined by analyzing the high-temperature thermal transmission properties and the transmission line method, respectively. The carrier mobility, ON/OFF ratio, SBH, and contact resistance of the few-layer MoTe2 device, which has p-type behavior with Ti/Au electrode, were found to be 53.7 cm2 V−1 s−1, 3.44 × 106, 163 meV, and 10.2 M Ω , respectively. Graphic abstract: [Figure not available: see fulltext.]
AB - Contact between two-dimensional (2D) transition metal dichalcogenides and certain metals (Au, Pd, Ti, or Pt) results in strong Fermi-level pinning and high resistance. Furthermore, to construct a high-performance device, accurate measurement of the contact resistance and Schottky barrier height (SBH) is crucial. In this study, the SBH and the resistance of a 2H phase few-layer molybdenum telluride (2H–MoTe2) film, which was grown by metal organic chemical vapor deposition, and a Ti/Au electrode were determined by analyzing the high-temperature thermal transmission properties and the transmission line method, respectively. The carrier mobility, ON/OFF ratio, SBH, and contact resistance of the few-layer MoTe2 device, which has p-type behavior with Ti/Au electrode, were found to be 53.7 cm2 V−1 s−1, 3.44 × 106, 163 meV, and 10.2 M Ω , respectively. Graphic abstract: [Figure not available: see fulltext.]
KW - 2H–MoTe
KW - High temperatures
KW - MOCVD
KW - Schottky barriers
KW - Thermionic missions
UR - http://www.scopus.com/inward/record.url?scp=85103641805&partnerID=8YFLogxK
U2 - 10.1007/s13391-021-00284-x
DO - 10.1007/s13391-021-00284-x
M3 - Article
AN - SCOPUS:85103641805
SN - 1738-8090
VL - 17
SP - 307
EP - 314
JO - Electronic Materials Letters
JF - Electronic Materials Letters
IS - 4
ER -