Accurate Analysis of Schottky Barrier Height in Au/2H–MoTe2 Atomically Thin Film Contact

Dong Min Kim, Sang il Kim, Tae Wan Kim

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Contact between two-dimensional (2D) transition metal dichalcogenides and certain metals (Au, Pd, Ti, or Pt) results in strong Fermi-level pinning and high resistance. Furthermore, to construct a high-performance device, accurate measurement of the contact resistance and Schottky barrier height (SBH) is crucial. In this study, the SBH and the resistance of a 2H phase few-layer molybdenum telluride (2H–MoTe2) film, which was grown by metal organic chemical vapor deposition, and a Ti/Au electrode were determined by analyzing the high-temperature thermal transmission properties and the transmission line method, respectively. The carrier mobility, ON/OFF ratio, SBH, and contact resistance of the few-layer MoTe2 device, which has p-type behavior with Ti/Au electrode, were found to be 53.7 cm2 V−1 s−1, 3.44 × 106, 163 meV, and 10.2 M Ω , respectively. Graphic abstract: [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)307-314
Number of pages8
JournalElectronic Materials Letters
Volume17
Issue number4
DOIs
StatePublished - Jul 2021

Keywords

  • 2H–MoTe
  • High temperatures
  • MOCVD
  • Schottky barriers
  • Thermionic missions

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