Accurate compact modeling for sub-20-nm nand flash cell array simulation using the PSP model

Jongwook Jeon; Il Han Park; Myounggon Kang; Wookghee Hahn; Kihwanm Choi; Sunghee Yun; Gi Young Yang; Keun Ho Lee; Young Kwan Park; Chilhee Chung

doi:10.1109/TED.2012.2219863

Accurate compact modeling for sub-20-nm nand flash cell array simulation using the PSP model

Jongwook Jeon, Il Han Park, Myounggon Kang, Wookghee Hahn, Kihwanm Choi, Sunghee Yun, Gi Young Yang, Keun Ho Lee, Young Kwan Park, Chilhee Chung

School of Advanced Fusion Studies

Samsung

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

In this paper, we have developed a new floating-gate-type Flash cell compact model based on the channel potential by using PSP metal-oxide- semiconductor description. Cell-to-cell coupling, Fowler-Nordheim tunneling, and new leakage current formulas have been implemented on Verilog-A compact model. The channel potential calculation of the PSP model enables accurate modeling of channel coupling and leakage currents which are associated with the boosted channel. In addition, the model parameter extraction procedure through 3-D technology computer-aided design (TCAD) and SPICE simulation is presented. The simulation results agree well with measured data of sub-20-nm nand cells.

Original language	English
Article number	6339037
Pages (from-to)	3503-3509
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	12
DOIs	https://doi.org/10.1109/TED.2012.2219863
State	Published - 2012

Keywords

Cell-to-cell coupling
compact modeling
Fowler-Nordheim (FN) tunneling
leakage current
nand Flash
SPICE simulation

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10.1109/TED.2012.2219863

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title = "Accurate compact modeling for sub-20-nm nand flash cell array simulation using the PSP model",

abstract = "In this paper, we have developed a new floating-gate-type Flash cell compact model based on the channel potential by using PSP metal-oxide- semiconductor description. Cell-to-cell coupling, Fowler-Nordheim tunneling, and new leakage current formulas have been implemented on Verilog-A compact model. The channel potential calculation of the PSP model enables accurate modeling of channel coupling and leakage currents which are associated with the boosted channel. In addition, the model parameter extraction procedure through 3-D technology computer-aided design (TCAD) and SPICE simulation is presented. The simulation results agree well with measured data of sub-20-nm nand cells.",

keywords = "Cell-to-cell coupling, compact modeling, Fowler-Nordheim (FN) tunneling, leakage current, nand Flash, SPICE simulation",

author = "Jongwook Jeon and Park, {Il Han} and Myounggon Kang and Wookghee Hahn and Kihwanm Choi and Sunghee Yun and Yang, {Gi Young} and Lee, {Keun Ho} and Park, {Young Kwan} and Chilhee Chung",

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doi = "10.1109/TED.2012.2219863",

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T1 - Accurate compact modeling for sub-20-nm nand flash cell array simulation using the PSP model

AU - Jeon, Jongwook

AU - Park, Il Han

AU - Kang, Myounggon

AU - Hahn, Wookghee

AU - Choi, Kihwanm

AU - Yun, Sunghee

AU - Yang, Gi Young

AU - Lee, Keun Ho

AU - Park, Young Kwan

AU - Chung, Chilhee

PY - 2012

Y1 - 2012

N2 - In this paper, we have developed a new floating-gate-type Flash cell compact model based on the channel potential by using PSP metal-oxide- semiconductor description. Cell-to-cell coupling, Fowler-Nordheim tunneling, and new leakage current formulas have been implemented on Verilog-A compact model. The channel potential calculation of the PSP model enables accurate modeling of channel coupling and leakage currents which are associated with the boosted channel. In addition, the model parameter extraction procedure through 3-D technology computer-aided design (TCAD) and SPICE simulation is presented. The simulation results agree well with measured data of sub-20-nm nand cells.

AB - In this paper, we have developed a new floating-gate-type Flash cell compact model based on the channel potential by using PSP metal-oxide- semiconductor description. Cell-to-cell coupling, Fowler-Nordheim tunneling, and new leakage current formulas have been implemented on Verilog-A compact model. The channel potential calculation of the PSP model enables accurate modeling of channel coupling and leakage currents which are associated with the boosted channel. In addition, the model parameter extraction procedure through 3-D technology computer-aided design (TCAD) and SPICE simulation is presented. The simulation results agree well with measured data of sub-20-nm nand cells.

KW - Cell-to-cell coupling

KW - compact modeling

KW - Fowler-Nordheim (FN) tunneling

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ER -

Accurate compact modeling for sub-20-nm nand flash cell array simulation using the PSP model

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Keywords

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