Abstract
We propose a technique to accurately estimate low-frequency noise (LFN) of a NAND flash cell. When we measure the LFN of a particular cell in NAND cell array, parasitic resistance and noise due to other cells have high potential to degrade the accuracy of this measurement. We derive small signal equivalent circuit of a NAND flash cell array and then, de-embed the effects of the above parasitic components. We perform this estimation in sub-20-nm NAND flash technology. The results clearly show the necessity of our proposed estimation technique.
Original language | English |
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Article number | 7451179 |
Pages (from-to) | 724-727 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 37 |
Issue number | 6 |
DOIs | |
State | Published - Jun 2016 |
Keywords
- Low Frequency Noise
- MLC
- NAND Flash
- Small-signal Analysis