Admittance Measurements on OFET Channel and Its Modeling With R-C Network

Keum Dong Jung, Cheon An Lee, Dong Wook Park, Byung Gook Park, Hyungcheol Shin, Jong Duk Lee

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


For the modeling of charge response behavior in the organic field-effect transistor (OFET) channel, the admittance of the OFET channel is measured from the two-terminal MIS structures. The channel is considered as an R-C network, and both the capacitance and loss of the measured admittance show good agreement with the model. The effective delay of the R-C network depends on the sheet resistance of the channel, the insulator capacitance, and the channel length. The maximum operating frequency of an OFET can be limited by this delay, because the channel charges cannot be induced completely within the delay time.

Original languageEnglish
Pages (from-to)204-206
Number of pages3
JournalIEEE Electron Device Letters
Issue number3
StatePublished - 7 Mar 2007


  • Admittance measurement
  • MIS structure
  • R-C network
  • channel
  • maximum
  • modeling
  • operating frequency
  • organic field-effect transistors (OFETs)
  • pentacene


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