Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Ye Jin Jang, Ashutosh Sharma, Jae Pil Jung

Research output: Contribution to journalReview articlepeer-review

2 Scopus citations


Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for achieving high-density integration, high-speed connectivity, and for downsizing of electronic devices. This paper describes recent developments in TSV fabrication and bonding methods in advanced 3D electronic packaging. In particular, the authors have overviewed the recent progress in the fabrication of TSV, various etching and functional layers, and conductive filling of TSVs, as well as bonding materials such as low-temperature nano-modified solders, transient liquid phase (TLP) bonding, Cu pillars, composite hybrids, and bump-free bonding, as well as the role of emerging high entropy alloy (HEA) solders in 3D microelectronic packaging. This paper serves as a guideline enumerating the current developments in 3D packaging that allow Si semiconductors to deliver improved performance and power efficiency.

Original languageEnglish
Article number7652
Issue number24
StatePublished - Dec 2023


  • Cu pillar bonding
  • high entropy alloys
  • hybrid composite bonding
  • three-dimensional packaging
  • through-Si-via


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