TY - JOUR
T1 - Air stability of PTCDI-C13-based n-OFETs on polymer interfacial layers
AU - Roh, Jeongkyun
AU - Lee, Jaemin
AU - Kang, Chan Mo
AU - Lee, Changhee
AU - Jun Jung, Byung
PY - 2013/7
Y1 - 2013/7
N2 - This Letter reports the novel use of poly(9-vinylcarbazole) (PVK) as a dielectric interfacial layer for n-type organic field-effect transistors (n-OFETs). With PVK, both the air stability and electron mobility of N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13)-based OFETs were improved. Among the PVKs with different weight-average molecular weight (Mw), PVK with high Mw showed good performance. The high glass transition temperature of PVK enabled thermal post annealing of the active layer, which resulted in a high electron mobility of 0.61 cm2/Vs. This mobility was maintained at 90% and 59% after 4 days and 105 days in air, respectively. The PVK interfacial layer reduced the trapped charges in the PTCDI-C13-based n-OFET for air-exposure and caused a decrease in the threshold voltage shift.
AB - This Letter reports the novel use of poly(9-vinylcarbazole) (PVK) as a dielectric interfacial layer for n-type organic field-effect transistors (n-OFETs). With PVK, both the air stability and electron mobility of N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13)-based OFETs were improved. Among the PVKs with different weight-average molecular weight (Mw), PVK with high Mw showed good performance. The high glass transition temperature of PVK enabled thermal post annealing of the active layer, which resulted in a high electron mobility of 0.61 cm2/Vs. This mobility was maintained at 90% and 59% after 4 days and 105 days in air, respectively. The PVK interfacial layer reduced the trapped charges in the PTCDI-C13-based n-OFET for air-exposure and caused a decrease in the threshold voltage shift.
KW - Air stability
KW - Organic field effect transistor
KW - Organic thin film transistor
KW - PTCDI-C13
UR - http://www.scopus.com/inward/record.url?scp=84880513657&partnerID=8YFLogxK
U2 - 10.1002/pssr.201307150
DO - 10.1002/pssr.201307150
M3 - Article
AN - SCOPUS:84880513657
SN - 1862-6254
VL - 7
SP - 469
EP - 472
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
IS - 7
ER -