Ambipolar organic thin-film transistors using C60 /pentacene structure: Characterization of electronic structure and device property

S. J. Kang; Y. Yi; C. Y. Kim; K. Cho; J. H. Seo; M. Noh; K. Jeong; K. H. Yoo; C. N. Whang

doi:10.1063/1.2138810

Ambipolar organic thin-film transistors using C₆₀ /pentacene structure: Characterization of electronic structure and device property

S. J. Kang, Y. Yi, C. Y. Kim, K. Cho, J. H. Seo, M. Noh, K. Jeong, K. H. Yoo, C. N. Whang

Department of Physics

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

We fabricated ambipolar organic thin-film transistors (OTFTs) using C60 and pentacene. The electronic structure of the interface was investigated by using ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy. The magnitude of the interface dipole and the band bendings at the interface was determined, and the complete energy level diagram for C60 on pentacene (C60 /pentacene) was obtained. The lowered band offsets, due to the enhanced charge redistribution in C60 /pentacene relative to pentacene on C60, are favorable for the ambipolar OTFTs. The measured field-effect mobilities were 0.017 cm2 V s and 0.007 cm2 V s for the p -channel and the n -channel operations, respectively. The threshold voltages were -2 V for the p channel and 15.6 V for the n channel, comparable to those of unipolar OTFTs using C60 or pentacene.

Original language	English
Article number	233502
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	23
DOIs	https://doi.org/10.1063/1.2138810
State	Published - 2005

Access to Document

10.1063/1.2138810

Cite this

@article{f7ff280d3ed3466ba93fe005a1f3d648,

title = "Ambipolar organic thin-film transistors using C60 /pentacene structure: Characterization of electronic structure and device property",

abstract = "We fabricated ambipolar organic thin-film transistors (OTFTs) using C60 and pentacene. The electronic structure of the interface was investigated by using ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy. The magnitude of the interface dipole and the band bendings at the interface was determined, and the complete energy level diagram for C60 on pentacene (C60 /pentacene) was obtained. The lowered band offsets, due to the enhanced charge redistribution in C60 /pentacene relative to pentacene on C60, are favorable for the ambipolar OTFTs. The measured field-effect mobilities were 0.017 cm2 V s and 0.007 cm2 V s for the p -channel and the n -channel operations, respectively. The threshold voltages were -2 V for the p channel and 15.6 V for the n channel, comparable to those of unipolar OTFTs using C60 or pentacene.",

author = "Kang, {S. J.} and Y. Yi and Kim, {C. Y.} and K. Cho and Seo, {J. H.} and M. Noh and K. Jeong and Yoo, {K. H.} and Whang, {C. N.}",

year = "2005",

doi = "10.1063/1.2138810",

language = "English",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Ambipolar organic thin-film transistors using C60 /pentacene structure

T2 - Characterization of electronic structure and device property

AU - Kang, S. J.

AU - Yi, Y.

AU - Kim, C. Y.

AU - Cho, K.

AU - Seo, J. H.

AU - Noh, M.

AU - Jeong, K.

AU - Yoo, K. H.

AU - Whang, C. N.

PY - 2005

Y1 - 2005

N2 - We fabricated ambipolar organic thin-film transistors (OTFTs) using C60 and pentacene. The electronic structure of the interface was investigated by using ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy. The magnitude of the interface dipole and the band bendings at the interface was determined, and the complete energy level diagram for C60 on pentacene (C60 /pentacene) was obtained. The lowered band offsets, due to the enhanced charge redistribution in C60 /pentacene relative to pentacene on C60, are favorable for the ambipolar OTFTs. The measured field-effect mobilities were 0.017 cm2 V s and 0.007 cm2 V s for the p -channel and the n -channel operations, respectively. The threshold voltages were -2 V for the p channel and 15.6 V for the n channel, comparable to those of unipolar OTFTs using C60 or pentacene.

AB - We fabricated ambipolar organic thin-film transistors (OTFTs) using C60 and pentacene. The electronic structure of the interface was investigated by using ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy. The magnitude of the interface dipole and the band bendings at the interface was determined, and the complete energy level diagram for C60 on pentacene (C60 /pentacene) was obtained. The lowered band offsets, due to the enhanced charge redistribution in C60 /pentacene relative to pentacene on C60, are favorable for the ambipolar OTFTs. The measured field-effect mobilities were 0.017 cm2 V s and 0.007 cm2 V s for the p -channel and the n -channel operations, respectively. The threshold voltages were -2 V for the p channel and 15.6 V for the n channel, comparable to those of unipolar OTFTs using C60 or pentacene.

UR - http://www.scopus.com/inward/record.url?scp=28444482735&partnerID=8YFLogxK

U2 - 10.1063/1.2138810

DO - 10.1063/1.2138810

M3 - Article

AN - SCOPUS:28444482735

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 233502

ER -

Ambipolar organic thin-film transistors using C₆₀ /pentacene structure: Characterization of electronic structure and device property

Abstract

Access to Document

Other files and links

Fingerprint

Cite this