Amorphous Silicon Pixel Layers with Cesium Iodide Converters for Medical Radiography

T. Jing, J. Drewery, G. Cho, W. S. Hong, H. Lee, S. N. Kaplan, A. Mireshghi, V. Perez-Mendez, C. A. Goodman, D. Wildermuth

Research output: Contribution to journalArticlepeer-review

56 Scopus citations


We describe the properties of evaporated layers of Cesium Iodide (Thallium activated) deposited on substrates that enable easy coupling to amorphous silicon pixel arrays. The CsI(Tl) layers range in thickness from 65 to 220µm. We used the two-boat evaporator system to deposit CsI(TI) layers. This system ensures the formation of the scintillator film with homogenous thallium concentration which is essential for optimizing the scintillation light emission efficiency. The TI concentration was kept to 0.1-0.2 mole percent for the highest light output. Temperature annealing can affect the microstructure as well as light output of the CsI(TI) film. 200-300oC temperature annealing can increase the light output by a factor of two. The amorphous silicon pixel arrays are pin diodes approximately 1µm thick with transparent electrodes to enable them to detect the scintillation light produced by Xrays incident on the CsI(TI). Digital radiography requires a good spatial resolution. This is accomplished by making the detector pixel size less than 50µm. The light emission from the CsI(Tl) is collimated by techniques involving the deposition process on patterned substrates. We have measured MTF of greater than 12 line pairs per mm at the 10% level.

Original languageEnglish
Pages (from-to)903-909
Number of pages7
JournalIEEE Transactions on Nuclear Science
Issue number4
StatePublished - Aug 1994


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