Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

J. T. Walton, W. S. Hong, P. M. Luke, N. W. Wang, F. P. Ziemba

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Results on the characterization of the electrical properties of amorphous silicon films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. The results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated.

Original languageEnglish
Pages (from-to)961-964
Number of pages4
JournalIEEE Transactions on Nuclear Science
Issue number3 PART 1
StatePublished - 1997


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