Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

J. T. Walton; W. S. Hong; P. M. Luke; N. W. Wang; F. P. Ziemba

doi:10.1109/23.603785

Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

J. T. Walton, W. S. Hong, P. M. Luke, N. W. Wang, F. P. Ziemba

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Results on the characterization of the electrical properties of amorphous silicon films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. The results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated.

Original language	English
Pages (from-to)	961-964
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	44
Issue number	3 PART 1
DOIs	https://doi.org/10.1109/23.603785
State	Published - 1997

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title = "Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications",

abstract = "Results on the characterization of the electrical properties of amorphous silicon films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. The results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated.",

author = "Walton, {J. T.} and Hong, {W. S.} and Luke, {P. M.} and Wang, {N. W.} and Ziemba, {F. P.}",

year = "1997",

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T1 - Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

AU - Walton, J. T.

AU - Hong, W. S.

AU - Luke, P. M.

AU - Wang, N. W.

AU - Ziemba, F. P.

PY - 1997

Y1 - 1997

N2 - Results on the characterization of the electrical properties of amorphous silicon films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. The results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated.

AB - Results on the characterization of the electrical properties of amorphous silicon films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. The results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated.

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JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 3 PART 1

ER -

Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

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