Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

J. T. Walton; W. S. Hong; P. N. Luke; N. W. Wang; F. P. Ziemba

doi:10.1109/NSSMIC.1996.591002

Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

J. T. Walton, W. S. Hong, P. N. Luke, N. W. Wang, F. P. Ziemba

Department of Materials Science and Engineering

Lawrence Berkeley National Laboratory

Research output: Contribution to journal › Conference article › peer-review

Abstract

Results on the characterization of the electrical properties of amorphous silicon films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. The results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated.

Original language	English
Pages (from-to)	389-392
Number of pages	4
Journal	IEEE Nuclear Science Symposium & Medical Imaging Conference
Volume	1
DOIs	https://doi.org/10.1109/NSSMIC.1996.591002
State	Published - 1996
Event	Proceedings of the 1996 IEEE Nuclear Science Symposium. Part 1 (of 3) - Anaheim, CA, USA Duration: 2 Nov 1996 → 9 Nov 1996

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title = "Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications",

abstract = "Results on the characterization of the electrical properties of amorphous silicon films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. The results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated.",

author = "Walton, {J. T.} and Hong, {W. S.} and Luke, {P. N.} and Wang, {N. W.} and Ziemba, {F. P.}",

year = "1996",

doi = "10.1109/NSSMIC.1996.591002",

language = "English",

volume = "1",

pages = "389--392",

journal = "IEEE Nuclear Science Symposium & Medical Imaging Conference",

issn = "1095-7863",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 IEEE Nuclear Science Symposium. Part 1 (of 3) ; Conference date: 02-11-1996 Through 09-11-1996",

}

TY - JOUR

T1 - Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

AU - Walton, J. T.

AU - Hong, W. S.

AU - Luke, P. N.

AU - Wang, N. W.

AU - Ziemba, F. P.

PY - 1996

Y1 - 1996

N2 - Results on the characterization of the electrical properties of amorphous silicon films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. The results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated.

AB - Results on the characterization of the electrical properties of amorphous silicon films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. The results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated.

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U2 - 10.1109/NSSMIC.1996.591002

DO - 10.1109/NSSMIC.1996.591002

M3 - Conference article

AN - SCOPUS:0030372161

SN - 1095-7863

VL - 1

SP - 389

EP - 392

JO - IEEE Nuclear Science Symposium & Medical Imaging Conference

JF - IEEE Nuclear Science Symposium & Medical Imaging Conference

T2 - Proceedings of the 1996 IEEE Nuclear Science Symposium. Part 1 (of 3)

Y2 - 2 November 1996 through 9 November 1996

ER -

Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

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