An accurate compact model considering direct-channel interference of adjacent cells in sub-30-nm nand flash technologies

Myounggon Kang; Il Han Park; Ik Joon Chang; Kyunghwan Lee; Seongjun Seo; Byung Gook Park; Hyungcheol Shin

doi:10.1109/LED.2012.2201442

An accurate compact model considering direct-channel interference of adjacent cells in sub-30-nm nand flash technologies

Myounggon Kang, Il Han Park, Ik Joon Chang, Kyunghwan Lee, Seongjun Seo, Byung Gook Park, Hyungcheol Shin

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We propose an accurate compact model of nand Flash memory, which is fully compatible with a BSIM-4 model. In sub-30-nm nand Flash, adjacent cells directly affect the channel-edge potential of the selected cell. Due to such direct-channel interference, previous compact models cannot accurately simulate the characteristics of sub-30-nm nand strings. In this letter, we describe the interference as the threshold voltage variation due to adjacent cells and change the threshold voltage equation of the BSIM-4 model. The equation is semitheoretically derived. Using the proposed model, we simulated several behaviors of 27-nm nand Flash strings. The results show more than 90% accuracy compared with the silicon measurements.

Original language	English
Article number	6220235
Pages (from-to)	1114-1116
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	8
DOIs	https://doi.org/10.1109/LED.2012.2201442
State	Published - 2012

Keywords

Cell-to-cell interferences
compact model
direct field effect
nand Flash
nand string

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10.1109/LED.2012.2201442

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@article{2e34d1e8a340472ca12f644d717a5a1f,

title = "An accurate compact model considering direct-channel interference of adjacent cells in sub-30-nm nand flash technologies",

abstract = "We propose an accurate compact model of nand Flash memory, which is fully compatible with a BSIM-4 model. In sub-30-nm nand Flash, adjacent cells directly affect the channel-edge potential of the selected cell. Due to such direct-channel interference, previous compact models cannot accurately simulate the characteristics of sub-30-nm nand strings. In this letter, we describe the interference as the threshold voltage variation due to adjacent cells and change the threshold voltage equation of the BSIM-4 model. The equation is semitheoretically derived. Using the proposed model, we simulated several behaviors of 27-nm nand Flash strings. The results show more than 90\% accuracy compared with the silicon measurements.",

keywords = "Cell-to-cell interferences, compact model, direct field effect, nand Flash, nand string",

author = "Myounggon Kang and Park, \{Il Han\} and Chang, \{Ik Joon\} and Kyunghwan Lee and Seongjun Seo and Park, \{Byung Gook\} and Hyungcheol Shin",

year = "2012",

doi = "10.1109/LED.2012.2201442",

language = "English",

volume = "33",

pages = "1114--1116",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - An accurate compact model considering direct-channel interference of adjacent cells in sub-30-nm nand flash technologies

AU - Kang, Myounggon

AU - Park, Il Han

AU - Chang, Ik Joon

AU - Lee, Kyunghwan

AU - Seo, Seongjun

AU - Park, Byung Gook

AU - Shin, Hyungcheol

PY - 2012

Y1 - 2012

N2 - We propose an accurate compact model of nand Flash memory, which is fully compatible with a BSIM-4 model. In sub-30-nm nand Flash, adjacent cells directly affect the channel-edge potential of the selected cell. Due to such direct-channel interference, previous compact models cannot accurately simulate the characteristics of sub-30-nm nand strings. In this letter, we describe the interference as the threshold voltage variation due to adjacent cells and change the threshold voltage equation of the BSIM-4 model. The equation is semitheoretically derived. Using the proposed model, we simulated several behaviors of 27-nm nand Flash strings. The results show more than 90% accuracy compared with the silicon measurements.

AB - We propose an accurate compact model of nand Flash memory, which is fully compatible with a BSIM-4 model. In sub-30-nm nand Flash, adjacent cells directly affect the channel-edge potential of the selected cell. Due to such direct-channel interference, previous compact models cannot accurately simulate the characteristics of sub-30-nm nand strings. In this letter, we describe the interference as the threshold voltage variation due to adjacent cells and change the threshold voltage equation of the BSIM-4 model. The equation is semitheoretically derived. Using the proposed model, we simulated several behaviors of 27-nm nand Flash strings. The results show more than 90% accuracy compared with the silicon measurements.

KW - Cell-to-cell interferences

KW - compact model

KW - direct field effect

KW - nand Flash

KW - nand string

UR - https://www.scopus.com/pages/publications/84864459363

U2 - 10.1109/LED.2012.2201442

DO - 10.1109/LED.2012.2201442

M3 - Article

AN - SCOPUS:84864459363

SN - 0741-3106

VL - 33

SP - 1114

EP - 1116

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

M1 - 6220235

ER -

An accurate compact model considering direct-channel interference of adjacent cells in sub-30-nm nand flash technologies

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Keywords

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