Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOX/TaN Memristors

Youngboo Cho; Jihyung Kim; Myounggon Kang; Sungjun Kim

doi:10.3390/ma16041687

Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO_X/TaN Memristors

Youngboo Cho, Jihyung Kim, Myounggon Kang, Sungjun Kim

School of Advanced Fusion Studies

Dongguk University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this work, we fabricated an ITO/WO_X/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog resistive switching to implement artificial synaptic devices. The device showed good pulse endurance (10⁴ cycles), a high on/off ratio (>10), and long retention (>10⁴ s) at room temperature. The conduction mechanism could be explained by Schottky emission conduction. Further, the resistive switching characteristics were performed by additional pulse-signal-based experiments for more practical operation. Lastly, the potentiation/depression characteristics were examined for 10 cycles. The results thus indicate that the WO_X-based devices are appropriate candidates for synaptic devices as well as next-generation nonvolatile memory.

Original language	English
Article number	1687
Journal	Materials
Volume	16
Issue number	4
DOIs	https://doi.org/10.3390/ma16041687
State	Published - Feb 2023

Keywords

artificial synaptic devices
memristor
neuromorphic computing
reactive sputtering
tungsten oxide

Access to Document

10.3390/ma16041687

Cite this

@article{1c8f6161c417446ba183dc486fcf1fbd,

title = "Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOX/TaN Memristors",

abstract = "In this work, we fabricated an ITO/WOX/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog resistive switching to implement artificial synaptic devices. The device showed good pulse endurance (104 cycles), a high on/off ratio (>10), and long retention (>104 s) at room temperature. The conduction mechanism could be explained by Schottky emission conduction. Further, the resistive switching characteristics were performed by additional pulse-signal-based experiments for more practical operation. Lastly, the potentiation/depression characteristics were examined for 10 cycles. The results thus indicate that the WOX-based devices are appropriate candidates for synaptic devices as well as next-generation nonvolatile memory.",

keywords = "artificial synaptic devices, memristor, neuromorphic computing, reactive sputtering, tungsten oxide",

author = "Youngboo Cho and Jihyung Kim and Myounggon Kang and Sungjun Kim",

note = "Publisher Copyright: {\textcopyright} 2023 by the authors.",

year = "2023",

month = feb,

doi = "10.3390/ma16041687",

language = "English",

volume = "16",

journal = "Materials",

issn = "1996-1944",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "4",

}

TY - JOUR

T1 - Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOX/TaN Memristors

AU - Cho, Youngboo

AU - Kim, Jihyung

AU - Kang, Myounggon

AU - Kim, Sungjun

PY - 2023/2

Y1 - 2023/2

N2 - In this work, we fabricated an ITO/WOX/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog resistive switching to implement artificial synaptic devices. The device showed good pulse endurance (104 cycles), a high on/off ratio (>10), and long retention (>104 s) at room temperature. The conduction mechanism could be explained by Schottky emission conduction. Further, the resistive switching characteristics were performed by additional pulse-signal-based experiments for more practical operation. Lastly, the potentiation/depression characteristics were examined for 10 cycles. The results thus indicate that the WOX-based devices are appropriate candidates for synaptic devices as well as next-generation nonvolatile memory.

AB - In this work, we fabricated an ITO/WOX/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog resistive switching to implement artificial synaptic devices. The device showed good pulse endurance (104 cycles), a high on/off ratio (>10), and long retention (>104 s) at room temperature. The conduction mechanism could be explained by Schottky emission conduction. Further, the resistive switching characteristics were performed by additional pulse-signal-based experiments for more practical operation. Lastly, the potentiation/depression characteristics were examined for 10 cycles. The results thus indicate that the WOX-based devices are appropriate candidates for synaptic devices as well as next-generation nonvolatile memory.

KW - artificial synaptic devices

KW - memristor

KW - neuromorphic computing

KW - reactive sputtering

KW - tungsten oxide

UR - http://www.scopus.com/inward/record.url?scp=85149237750&partnerID=8YFLogxK

U2 - 10.3390/ma16041687

DO - 10.3390/ma16041687

M3 - Article

AN - SCOPUS:85149237750

SN - 1996-1944

VL - 16

JO - Materials

JF - Materials

IS - 4

M1 - 1687

ER -

Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO_X/TaN Memristors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this