Analysis and comparison of intrinsic characteristics for single and multi-channel nanoplate vertical FET devices

Kyul Ko; Changbeom Woo; Minsoo Kim; Youngsoo Seo; Shinkeun Kim; Myounggon Kang; Hyungcheol Shin

doi:10.5573/JSTS.2017.17.4.691

Analysis and comparison of intrinsic characteristics for single and multi-channel nanoplate vertical FET devices

Kyul Ko, Changbeom Woo, Minsoo Kim, Youngsoo Seo, Shinkeun Kim, Myounggon Kang, Hyungcheol Shin

School of Advanced Fusion Studies

Seoul National University

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, intrinsic characteristics of gate-all-around (GAA) nanoplate (NP) vertical FET (VFET) were investigated for single and multi-channel structure through 3-D technology computer-aided design (TCAD) simulations. The vertical device has strong immunity for the unprecedented short channel effects (SCE) and intrinsic gate delay compared with the lateral device owing to the flexible expansion channel in vertical direction. The proposed single and multi-channel NP VFETs (NP height = 40 nm) exhibit excellent characteristics with I_on/I_off > 10⁵, subthreshold swing (SS) < 73 mV/decade, and drain-induced barrier lowering (DIBL) < 60 mV/V.

Original language	English
Pages (from-to)	691-696
Number of pages	6
Journal	Journal of Semiconductor Technology and Science
Volume	17
Issue number	5
DOIs	https://doi.org/10.5573/JSTS.2017.17.4.691
State	Published - Oct 2017

Keywords

Gate-all-around (GAA)
Multi-channel device
Nanoplate (NP)
RC delay
Short channel effect (SCE)
Vertical FET (VFET)

Access to Document

10.5573/JSTS.2017.17.4.691

Cite this

@article{aa8753a3396b42c8b87300cd0a00668e,

title = "Analysis and comparison of intrinsic characteristics for single and multi-channel nanoplate vertical FET devices",

abstract = "In this paper, intrinsic characteristics of gate-all-around (GAA) nanoplate (NP) vertical FET (VFET) were investigated for single and multi-channel structure through 3-D technology computer-aided design (TCAD) simulations. The vertical device has strong immunity for the unprecedented short channel effects (SCE) and intrinsic gate delay compared with the lateral device owing to the flexible expansion channel in vertical direction. The proposed single and multi-channel NP VFETs (NP height = 40 nm) exhibit excellent characteristics with Ion/Ioff > 105, subthreshold swing (SS) < 73 mV/decade, and drain-induced barrier lowering (DIBL) < 60 mV/V.",

keywords = "Gate-all-around (GAA), Multi-channel device, Nanoplate (NP), RC delay, Short channel effect (SCE), Vertical FET (VFET)",

author = "Kyul Ko and Changbeom Woo and Minsoo Kim and Youngsoo Seo and Shinkeun Kim and Myounggon Kang and Hyungcheol Shin",

year = "2017",

month = oct,

doi = "10.5573/JSTS.2017.17.4.691",

language = "English",

volume = "17",

pages = "691--696",

journal = "Journal of Semiconductor Technology and Science",

issn = "1598-1657",

publisher = "Institute of Electronics Engineers of Korea",

number = "5",

}

TY - JOUR

T1 - Analysis and comparison of intrinsic characteristics for single and multi-channel nanoplate vertical FET devices

AU - Ko, Kyul

AU - Woo, Changbeom

AU - Kim, Minsoo

AU - Seo, Youngsoo

AU - Kim, Shinkeun

AU - Kang, Myounggon

AU - Shin, Hyungcheol

PY - 2017/10

Y1 - 2017/10

N2 - In this paper, intrinsic characteristics of gate-all-around (GAA) nanoplate (NP) vertical FET (VFET) were investigated for single and multi-channel structure through 3-D technology computer-aided design (TCAD) simulations. The vertical device has strong immunity for the unprecedented short channel effects (SCE) and intrinsic gate delay compared with the lateral device owing to the flexible expansion channel in vertical direction. The proposed single and multi-channel NP VFETs (NP height = 40 nm) exhibit excellent characteristics with Ion/Ioff > 105, subthreshold swing (SS) < 73 mV/decade, and drain-induced barrier lowering (DIBL) < 60 mV/V.

AB - In this paper, intrinsic characteristics of gate-all-around (GAA) nanoplate (NP) vertical FET (VFET) were investigated for single and multi-channel structure through 3-D technology computer-aided design (TCAD) simulations. The vertical device has strong immunity for the unprecedented short channel effects (SCE) and intrinsic gate delay compared with the lateral device owing to the flexible expansion channel in vertical direction. The proposed single and multi-channel NP VFETs (NP height = 40 nm) exhibit excellent characteristics with Ion/Ioff > 105, subthreshold swing (SS) < 73 mV/decade, and drain-induced barrier lowering (DIBL) < 60 mV/V.

KW - Gate-all-around (GAA)

KW - Multi-channel device

KW - Nanoplate (NP)

KW - RC delay

KW - Short channel effect (SCE)

KW - Vertical FET (VFET)

UR - http://www.scopus.com/inward/record.url?scp=85032804034&partnerID=8YFLogxK

U2 - 10.5573/JSTS.2017.17.4.691

DO - 10.5573/JSTS.2017.17.4.691

M3 - Article

AN - SCOPUS:85032804034

SN - 1598-1657

VL - 17

SP - 691

EP - 696

JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

IS - 5

ER -

Analysis and comparison of intrinsic characteristics for single and multi-channel nanoplate vertical FET devices

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this