Analysis and Optimization for Characteristics of Vertical GaN Junctionless MOSFETs Depending on Specifications of GaN Substrates

Hee Dae An, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jaewon Jang, Jin Hyuk Bae, Sin Hyung Lee, In Man Kang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this paper, the electrical performances for of vertical GaN junctionless metal–oxide–semiconductor-field-effect-transistors based on GaN substrate were investigated to improve the device characteristics. To improve the breakdown voltage (BV), the optimization process is performed using two-dimensional simulation technology computer-aided design. Because BV is strongly affected by the undoped GaN drift layer, gate length, and fin width, and it should be designed in views of them. The optimized device has 30.63 kA/cm2 of the on-state drain current density 30.63 kA/cm2 and 2,009 V of BV. As a result, the device characteristics for high-power and high-voltage applications can be further improved through the optimization and characterization used in this paper.

Original languageEnglish
Pages (from-to)3487-3498
Number of pages12
JournalJournal of Electrical Engineering and Technology
Volume17
Issue number6
DOIs
StatePublished - Nov 2022

Keywords

  • Breakdown voltage
  • Bulk GaN substrate
  • Power transistors
  • Vertical GaN junctionless MOSFET

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