Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3 N4 Dual-Layer Insulator

So Ra Min, Min Su Cho, Sang Ho Lee, Jin Park, Hee Dae An, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Jae Won Jang, Jin Hyuk Bae, Sin Hyung Lee, In Man Kang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


The self-heating effects (SHEs) on the electrical characteristics of the GaN MOSFETs with a stacked TiO2/Si3 N4 dual-layer insulator are investigated by using rigorous TCAD simulations. To accurately analyze them, the GaN MOSFETs with Si3 N4 single-layer insulator are conducted to the simulation works together. The stacked TiO2/Si3 N4 GaN MOSFET has a maximum on-state current of 743.8 mA/mm, which is the improved value due to the larger oxide capacitance of TiO2/Si3 N4 than that of a Si3 N4 single-layer insulator. However, the electrical field and current density increased by the stacked TiO2/Si3 N4 layers make the device’s temperature higher. That results in the degradation of the device’s performance. We simulated and analyzed the operation mechanisms of the GaN MOSFETs modulated by the SHEs in view of high-power and high-frequency characteristics. The maximum temperature inside the device was increased to 409.89 K by the SHEs. In this case, the stacked TiO2/Si3 N4-based GaN MOSFETs had 25%-lower values for both the maximum on-state current and the maximum transconductance compared with the device where SHEs did not occur; Ron increased from 1.41 mΩ·cm2 to 2.56 mΩ·cm2, and the cut-off frequency was reduced by 26% from 5.45 GHz. Although the performance of the stacked TiO2/Si3 N4-based GaN MOSFET is degraded by SHEs, it shows superior electrical performance than GaN MOSFETs with Si3 N4 single-layer insulator.

Original languageEnglish
Article number819
Issue number3
StatePublished - 1 Feb 2022


  • Aluminum gallium nitride (AlGaN)
  • Dual-layer insulator
  • Gallium nitride (GaN)
  • Radio frequency (RF)
  • Sapphire
  • Self-heating effect (SHE)
  • Silicon carbide (SiC)
  • Silicon nitride (Si N )
  • Titanium dioxide (TiO )


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