Analysis of Cell Current with Abnormal Channel Profile in 3D NAND Flash Memory

Jaewoo Lee; Yungjun Kim; Yoocheol Shin; Seongjo Park; Daewoong Kang; Myounggon Kang

doi:10.5573/JSTS.2024.24.2.138

Analysis of Cell Current with Abnormal Channel Profile in 3D NAND Flash Memory

Jaewoo Lee, Yungjun Kim, Yoocheol Shin, Seongjo Park, Daewoong Kang, Myounggon Kang

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

Abstract

This letter presents an in-depth investigation of the channel profile and cell current analysis of abnormal vertical 3D NAND flash memory. By utilizing 3D (technology computer-aided design) TCAD simulation, the channel profile was designed with an oxide-nitride-oxide (O/N/O) structure, providing insights into its impact on device performance. The I_D-V_DS curve was measured after setting the V_th target in the program state, enabling the analysis of the cell current. Additionally, the E-field of the tunneling oxide was considered to gain a comprehensive understanding of the device behavior. Based on the analysis results, the structure most vulnerable to cell current in vertical 3D NAND flash memory has been identified.

Original language	English
Pages (from-to)	138-143
Number of pages	6
Journal	Journal of Semiconductor Technology and Science
Volume	24
Issue number	2
DOIs	https://doi.org/10.5573/JSTS.2024.24.2.138
State	Published - Apr 2024

Keywords

3D NAND flash memory
cell current
channel profile
electric field
threshold voltage

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10.5573/JSTS.2024.24.2.138

Cite this

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abstract = "This letter presents an in-depth investigation of the channel profile and cell current analysis of abnormal vertical 3D NAND flash memory. By utilizing 3D (technology computer-aided design) TCAD simulation, the channel profile was designed with an oxide-nitride-oxide (O/N/O) structure, providing insights into its impact on device performance. The ID-VDS curve was measured after setting the Vth target in the program state, enabling the analysis of the cell current. Additionally, the E-field of the tunneling oxide was considered to gain a comprehensive understanding of the device behavior. Based on the analysis results, the structure most vulnerable to cell current in vertical 3D NAND flash memory has been identified.",

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author = "Jaewoo Lee and Yungjun Kim and Yoocheol Shin and Seongjo Park and Daewoong Kang and Myounggon Kang",

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AU - Lee, Jaewoo

AU - Kim, Yungjun

AU - Shin, Yoocheol

AU - Park, Seongjo

AU - Kang, Daewoong

AU - Kang, Myounggon

PY - 2024/4

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N2 - This letter presents an in-depth investigation of the channel profile and cell current analysis of abnormal vertical 3D NAND flash memory. By utilizing 3D (technology computer-aided design) TCAD simulation, the channel profile was designed with an oxide-nitride-oxide (O/N/O) structure, providing insights into its impact on device performance. The ID-VDS curve was measured after setting the Vth target in the program state, enabling the analysis of the cell current. Additionally, the E-field of the tunneling oxide was considered to gain a comprehensive understanding of the device behavior. Based on the analysis results, the structure most vulnerable to cell current in vertical 3D NAND flash memory has been identified.

AB - This letter presents an in-depth investigation of the channel profile and cell current analysis of abnormal vertical 3D NAND flash memory. By utilizing 3D (technology computer-aided design) TCAD simulation, the channel profile was designed with an oxide-nitride-oxide (O/N/O) structure, providing insights into its impact on device performance. The ID-VDS curve was measured after setting the Vth target in the program state, enabling the analysis of the cell current. Additionally, the E-field of the tunneling oxide was considered to gain a comprehensive understanding of the device behavior. Based on the analysis results, the structure most vulnerable to cell current in vertical 3D NAND flash memory has been identified.

KW - 3D NAND flash memory

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Analysis of Cell Current with Abnormal Channel Profile in 3D NAND Flash Memory

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