Abstract
In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET and Nanowire FET (NW-FET) according to the structural aspect through comparison of the two devices. Similar to n-type devices, p-type NW-FETs are less affected than FinFETs by the TID effect. For the inverter TID circuit simulation, both n-and p-types of FinFET and NW-FET were analyzed regarding the TID effect. The inverter operation considering the TID effect was verified using the Berkeley short-channel insulated-gate FET model (BSIM) common multi-gate (CMG) parameters. In addition, an inverter circuit composed of the NW-FET exhibited a smaller change by the TID than that of an inverter circuit composed of the FinFET. Therefore, the gate controllability of the gate-all-around (GAA) device had an excellent tolerance to not only short-channel effects (SCE) but also TID effects.
| Original language | English |
|---|---|
| Article number | 894 |
| Pages (from-to) | 1-9 |
| Number of pages | 9 |
| Journal | Applied Sciences (Switzerland) |
| Volume | 11 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1 Feb 2021 |
Keywords
- Circuit simulation
- Compact modeling
- FinFET
- Inverter
- Nanowire FET (NW-FET)
- Radiation
- Total ionizing dose (TID)