Analysis of DC Self Heating Effect in Stacked Nanosheet Gate-All-Around Transistor

Min Jae Kang; Ilho Myeong; Myounggon Kang; Hyungcheol Shin

doi:10.1109/EDTM.2018.8421495

Analysis of DC Self Heating Effect in Stacked Nanosheet Gate-All-Around Transistor

Min Jae Kang, Ilho Myeong, Myounggon Kang, Hyungcheol Shin

School of Advanced Fusion Studies

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

In this paper, self-heating effect in newly introduced stacked nanosheet gate-all-around transistor is investigated and discussed, and several architecture parameters such as metal gate thickness, number of channels, thermal conductivity of ILD and channel thickness affecting thermal reliability of nanosheet FET are studied through simulations. It is illustrated that nanosheet FET shows great lattice temperature variations and thermal resistance fluctuations from changes in such architecture parameters, and these can be mitigated by increasing thermal conductivity of ILD, and metal gate thickness.

Original language	English
Title of host publication	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	343-345
Number of pages	3
ISBN (Print)	9781538637111
DOIs	https://doi.org/10.1109/EDTM.2018.8421495
State	Published - 26 Jul 2018
Event	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan Duration: 13 Mar 2018 → 16 Mar 2018

Publication series

Name	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Conference

Conference	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Country/Territory	Japan
City	Kobe
Period	13/03/18 → 16/03/18

Keywords

Self-Heating Effect
Stacked Nanosheet Gate-All-Around Transistor
Thermal Reliability

Access to Document

10.1109/EDTM.2018.8421495

Cite this

Kang, M. J., Myeong, I., Kang, M., & Shin, H. (2018). Analysis of DC Self Heating Effect in Stacked Nanosheet Gate-All-Around Transistor. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 343-345). Article 8421495 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421495

Kang, Min Jae ; Myeong, Ilho ; Kang, Myounggon et al. / Analysis of DC Self Heating Effect in Stacked Nanosheet Gate-All-Around Transistor. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 343-345 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

@inproceedings{280c116bf42541009903ec7efe033cae,

title = "Analysis of DC Self Heating Effect in Stacked Nanosheet Gate-All-Around Transistor",

abstract = "In this paper, self-heating effect in newly introduced stacked nanosheet gate-all-around transistor is investigated and discussed, and several architecture parameters such as metal gate thickness, number of channels, thermal conductivity of ILD and channel thickness affecting thermal reliability of nanosheet FET are studied through simulations. It is illustrated that nanosheet FET shows great lattice temperature variations and thermal resistance fluctuations from changes in such architecture parameters, and these can be mitigated by increasing thermal conductivity of ILD, and metal gate thickness.",

keywords = "Self-Heating Effect, Stacked Nanosheet Gate-All-Around Transistor, Thermal Reliability",

author = "Kang, {Min Jae} and Ilho Myeong and Myounggon Kang and Hyungcheol Shin",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

year = "2018",

month = jul,

day = "26",

doi = "10.1109/EDTM.2018.8421495",

language = "English",

isbn = "9781538637111",

series = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "343--345",

booktitle = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

address = "United States",

}

Kang, MJ, Myeong, I, Kang, M & Shin, H 2018, Analysis of DC Self Heating Effect in Stacked Nanosheet Gate-All-Around Transistor. in 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421495, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 343-345, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 13/03/18. https://doi.org/10.1109/EDTM.2018.8421495

Analysis of DC Self Heating Effect in Stacked Nanosheet Gate-All-Around Transistor. / Kang, Min Jae; Myeong, Ilho; Kang, Myounggon et al.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 343-345 8421495 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Analysis of DC Self Heating Effect in Stacked Nanosheet Gate-All-Around Transistor

AU - Kang, Min Jae

AU - Myeong, Ilho

AU - Kang, Myounggon

AU - Shin, Hyungcheol

PY - 2018/7/26

Y1 - 2018/7/26

N2 - In this paper, self-heating effect in newly introduced stacked nanosheet gate-all-around transistor is investigated and discussed, and several architecture parameters such as metal gate thickness, number of channels, thermal conductivity of ILD and channel thickness affecting thermal reliability of nanosheet FET are studied through simulations. It is illustrated that nanosheet FET shows great lattice temperature variations and thermal resistance fluctuations from changes in such architecture parameters, and these can be mitigated by increasing thermal conductivity of ILD, and metal gate thickness.

AB - In this paper, self-heating effect in newly introduced stacked nanosheet gate-all-around transistor is investigated and discussed, and several architecture parameters such as metal gate thickness, number of channels, thermal conductivity of ILD and channel thickness affecting thermal reliability of nanosheet FET are studied through simulations. It is illustrated that nanosheet FET shows great lattice temperature variations and thermal resistance fluctuations from changes in such architecture parameters, and these can be mitigated by increasing thermal conductivity of ILD, and metal gate thickness.

KW - Self-Heating Effect

KW - Stacked Nanosheet Gate-All-Around Transistor

KW - Thermal Reliability

UR - http://www.scopus.com/inward/record.url?scp=85051534783&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2018.8421495

DO - 10.1109/EDTM.2018.8421495

M3 - Conference contribution

AN - SCOPUS:85051534783

SN - 9781538637111

T3 - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

SP - 343

EP - 345

BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018

Y2 - 13 March 2018 through 16 March 2018

ER -

Kang MJ, Myeong I, Kang M, Shin H. Analysis of DC Self Heating Effect in Stacked Nanosheet Gate-All-Around Transistor. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 343-345. 8421495. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). doi: 10.1109/EDTM.2018.8421495

Analysis of DC Self Heating Effect in Stacked Nanosheet Gate-All-Around Transistor

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