Analysis of electrical and hysteresis characteristics of flexible OTFT using solution-processable DPP-DTT polymer and Parylene-C

Yoojeong Ko; Hyo Won Jang; Hyeok Kim; Dong Wook Park

doi:10.1016/j.sse.2024.108922

Analysis of electrical and hysteresis characteristics of flexible OTFT using solution-processable DPP-DTT polymer and Parylene-C

Yoojeong Ko, Hyo Won Jang, Hyeok Kim, Dong Wook Park

School of Electrical and Computer Engineering

University of Seoul

Research output: Contribution to journal › Article › peer-review

Abstract

Organic thin-film transistors (OTFTs) fabricated on Parylene-C substrates have the advantages of a simple process, low cost, and flexible characteristics. This study introduces the manufacturing method and electrical characteristics of an OTFT using organic materials as the substrate, gate dielectric, and channel material. PDPP2T-TT-OD(DPP-DTT) is used as the channel material, which is a highly mobile p-type polymer with good air stability. The proposed OTFT device has flexible characteristics because it is fabricated on a Parylene-C substrate and can be used even in a curved state. Furthermore, the manufacturing process was largely achieved via a simple, low-cost solution process using spin-coating and photolithography with a photo-curable material. Under flat conditions, the threshold voltage (V_TH) is approximately –3 V, the average I_ON/I_OFF ratio is approximately 10⁵, and the mobility is 0.84 cm²/Vs.

Original language	English
Article number	108922
Journal	Solid-State Electronics
Volume	216
DOIs	https://doi.org/10.1016/j.sse.2024.108922
State	Published - Jun 2024

Keywords

DPP-DTT
Flexible
Hysteresis
OTFT
Parylene-C

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10.1016/j.sse.2024.108922

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title = "Analysis of electrical and hysteresis characteristics of flexible OTFT using solution-processable DPP-DTT polymer and Parylene-C",

abstract = "Organic thin-film transistors (OTFTs) fabricated on Parylene-C substrates have the advantages of a simple process, low cost, and flexible characteristics. This study introduces the manufacturing method and electrical characteristics of an OTFT using organic materials as the substrate, gate dielectric, and channel material. PDPP2T-TT-OD(DPP-DTT) is used as the channel material, which is a highly mobile p-type polymer with good air stability. The proposed OTFT device has flexible characteristics because it is fabricated on a Parylene-C substrate and can be used even in a curved state. Furthermore, the manufacturing process was largely achieved via a simple, low-cost solution process using spin-coating and photolithography with a photo-curable material. Under flat conditions, the threshold voltage (VTH) is approximately –3 V, the average ION/IOFF ratio is approximately 105, and the mobility is 0.84 cm2/Vs.",

keywords = "DPP-DTT, Flexible, Hysteresis, OTFT, Parylene-C",

author = "Yoojeong Ko and Jang, {Hyo Won} and Hyeok Kim and Park, {Dong Wook}",

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year = "2024",

month = jun,

doi = "10.1016/j.sse.2024.108922",

language = "English",

volume = "216",

journal = "Solid-State Electronics",

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T1 - Analysis of electrical and hysteresis characteristics of flexible OTFT using solution-processable DPP-DTT polymer and Parylene-C

AU - Ko, Yoojeong

AU - Jang, Hyo Won

AU - Kim, Hyeok

AU - Park, Dong Wook

PY - 2024/6

Y1 - 2024/6

N2 - Organic thin-film transistors (OTFTs) fabricated on Parylene-C substrates have the advantages of a simple process, low cost, and flexible characteristics. This study introduces the manufacturing method and electrical characteristics of an OTFT using organic materials as the substrate, gate dielectric, and channel material. PDPP2T-TT-OD(DPP-DTT) is used as the channel material, which is a highly mobile p-type polymer with good air stability. The proposed OTFT device has flexible characteristics because it is fabricated on a Parylene-C substrate and can be used even in a curved state. Furthermore, the manufacturing process was largely achieved via a simple, low-cost solution process using spin-coating and photolithography with a photo-curable material. Under flat conditions, the threshold voltage (VTH) is approximately –3 V, the average ION/IOFF ratio is approximately 105, and the mobility is 0.84 cm2/Vs.

AB - Organic thin-film transistors (OTFTs) fabricated on Parylene-C substrates have the advantages of a simple process, low cost, and flexible characteristics. This study introduces the manufacturing method and electrical characteristics of an OTFT using organic materials as the substrate, gate dielectric, and channel material. PDPP2T-TT-OD(DPP-DTT) is used as the channel material, which is a highly mobile p-type polymer with good air stability. The proposed OTFT device has flexible characteristics because it is fabricated on a Parylene-C substrate and can be used even in a curved state. Furthermore, the manufacturing process was largely achieved via a simple, low-cost solution process using spin-coating and photolithography with a photo-curable material. Under flat conditions, the threshold voltage (VTH) is approximately –3 V, the average ION/IOFF ratio is approximately 105, and the mobility is 0.84 cm2/Vs.

KW - DPP-DTT

KW - Flexible

KW - Hysteresis

KW - OTFT

KW - Parylene-C

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SN - 0038-1101

VL - 216

JO - Solid-State Electronics

JF - Solid-State Electronics

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ER -

Analysis of electrical and hysteresis characteristics of flexible OTFT using solution-processable DPP-DTT polymer and Parylene-C

Abstract

Keywords

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