Analysis of metal gate work-function variation for vertical nanoplate FET in 6-T SRAMs

Kyul Ko; Dokyun Son; Myounggon Kang; Hyungcheol Shin

doi:10.23919/SNW.2017.8242297

Analysis of metal gate work-function variation for vertical nanoplate FET in 6-T SRAMs

Kyul Ko, Dokyun Son, Myounggon Kang, Hyungcheol Shin

School of Advanced Fusion Studies

Seoul National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

In this work, Work-Function Variation (WFV) are studied on 5 nm node gate-all-around (GAA) Vertical Nanoplate FET (NP VFET) in 6-T SRAM using Technology computer-aided design (TCAD) simulation. As WFV effects become intensified, we investigate the WFV effects for an accurate guideline with regard to grain size (GS) and channel area of NP VFET in SRAM bit cells.

Original language	English
Title of host publication	2017 Silicon Nanoelectronics Workshop, SNW 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	61-62
Number of pages	2
ISBN (Electronic)	9784863486478
DOIs	https://doi.org/10.23919/SNW.2017.8242297
State	Published - 29 Dec 2017
Event	22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan Duration: 4 Jun 2017 → 5 Jun 2017

Publication series

Name	2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume	2017-January

Conference

Conference	22nd Silicon Nanoelectronics Workshop, SNW 2017
Country/Territory	Japan
City	Kyoto
Period	4/06/17 → 5/06/17

Access to Document

10.23919/SNW.2017.8242297

Cite this

Ko, K., Son, D., Kang, M., & Shin, H. (2017). Analysis of metal gate work-function variation for vertical nanoplate FET in 6-T SRAMs. In 2017 Silicon Nanoelectronics Workshop, SNW 2017 (pp. 61-62). Article 8242297 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2017.8242297

@inproceedings{4aee941c5c3e463c9d7bcf5f2eee6594,

title = "Analysis of metal gate work-function variation for vertical nanoplate FET in 6-T SRAMs",

abstract = "In this work, Work-Function Variation (WFV) are studied on 5 nm node gate-all-around (GAA) Vertical Nanoplate FET (NP VFET) in 6-T SRAM using Technology computer-aided design (TCAD) simulation. As WFV effects become intensified, we investigate the WFV effects for an accurate guideline with regard to grain size (GS) and channel area of NP VFET in SRAM bit cells.",

author = "Kyul Ko and Dokyun Son and Myounggon Kang and Hyungcheol Shin",

note = "Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",

year = "2017",

month = dec,

day = "29",

doi = "10.23919/SNW.2017.8242297",

language = "English",

series = "2017 Silicon Nanoelectronics Workshop, SNW 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "61--62",

booktitle = "2017 Silicon Nanoelectronics Workshop, SNW 2017",

address = "United States",

}

Ko, K, Son, D, Kang, M & Shin, H 2017, Analysis of metal gate work-function variation for vertical nanoplate FET in 6-T SRAMs. in 2017 Silicon Nanoelectronics Workshop, SNW 2017., 8242297, 2017 Silicon Nanoelectronics Workshop, SNW 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 61-62, 22nd Silicon Nanoelectronics Workshop, SNW 2017, Kyoto, Japan, 4/06/17. https://doi.org/10.23919/SNW.2017.8242297

Analysis of metal gate work-function variation for vertical nanoplate FET in 6-T SRAMs. / Ko, Kyul; Son, Dokyun; Kang, Myounggon et al.
2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 61-62 8242297 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Analysis of metal gate work-function variation for vertical nanoplate FET in 6-T SRAMs

AU - Ko, Kyul

AU - Son, Dokyun

AU - Kang, Myounggon

AU - Shin, Hyungcheol

PY - 2017/12/29

Y1 - 2017/12/29

N2 - In this work, Work-Function Variation (WFV) are studied on 5 nm node gate-all-around (GAA) Vertical Nanoplate FET (NP VFET) in 6-T SRAM using Technology computer-aided design (TCAD) simulation. As WFV effects become intensified, we investigate the WFV effects for an accurate guideline with regard to grain size (GS) and channel area of NP VFET in SRAM bit cells.

AB - In this work, Work-Function Variation (WFV) are studied on 5 nm node gate-all-around (GAA) Vertical Nanoplate FET (NP VFET) in 6-T SRAM using Technology computer-aided design (TCAD) simulation. As WFV effects become intensified, we investigate the WFV effects for an accurate guideline with regard to grain size (GS) and channel area of NP VFET in SRAM bit cells.

UR - http://www.scopus.com/inward/record.url?scp=85051053157&partnerID=8YFLogxK

U2 - 10.23919/SNW.2017.8242297

DO - 10.23919/SNW.2017.8242297

M3 - Conference contribution

AN - SCOPUS:85051053157

T3 - 2017 Silicon Nanoelectronics Workshop, SNW 2017

SP - 61

EP - 62

BT - 2017 Silicon Nanoelectronics Workshop, SNW 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 22nd Silicon Nanoelectronics Workshop, SNW 2017

Y2 - 4 June 2017 through 5 June 2017

ER -

Analysis of metal gate work-function variation for vertical nanoplate FET in 6-T SRAMs

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this