Abstract
—In this study, the multiple fin-type vertical GaN power transistor based on the GaN-on-GaN were analyzed using the two-dimensional technical computer-aided design (2-D TCAD) simulations. In the field of the electric vehicle systems requiring a high operation voltage of 1,000 V or more, the power devices have a large device area because of the long distance between the gate region and the drain region. This problem can be addressed by using the fin-type vertical GaN power transistor, which can reduce the device area due to its vertical channel. For the high current performance, the multiple fin-type structure was required. Thus, we investigated characteristics depending on the number of fin (Nfin). By comparing the on-state drain currents (Ion), the breakdown voltages (BV), and the on-resistances (Ron) with different Nfin, this study provides an understanding of the electrical properties of the multiple fin-type vertical GaN power transistor affected by Nfin.
Original language | English |
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Pages (from-to) | 17-25 |
Number of pages | 9 |
Journal | Journal of Semiconductor Technology and Science |
Volume | 23 |
Issue number | 1 |
DOIs | |
State | Published - Feb 2023 |
Keywords
- Gallium nitride (GaN)
- fin structure
- power device
- vertical device