Analysis of Multiple Fin-type Vertical GaN Power Transistors based on Bulk GaN Substrates

Jun Hyeok Heo, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Ga Eon Kang, Jaewon Jang, Jin Hyuk Bae, Sin Hyung Lee, In Man Kang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

—In this study, the multiple fin-type vertical GaN power transistor based on the GaN-on-GaN were analyzed using the two-dimensional technical computer-aided design (2-D TCAD) simulations. In the field of the electric vehicle systems requiring a high operation voltage of 1,000 V or more, the power devices have a large device area because of the long distance between the gate region and the drain region. This problem can be addressed by using the fin-type vertical GaN power transistor, which can reduce the device area due to its vertical channel. For the high current performance, the multiple fin-type structure was required. Thus, we investigated characteristics depending on the number of fin (Nfin). By comparing the on-state drain currents (Ion), the breakdown voltages (BV), and the on-resistances (Ron) with different Nfin, this study provides an understanding of the electrical properties of the multiple fin-type vertical GaN power transistor affected by Nfin.

Original languageEnglish
Pages (from-to)17-25
Number of pages9
JournalJournal of Semiconductor Technology and Science
Volume23
Issue number1
DOIs
StatePublished - Feb 2023

Keywords

  • Gallium nitride (GaN)
  • fin structure
  • power device
  • vertical device

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