Analysis of self heating effect in vertical-channel field effect transistor

Ilho Myeong; Jongwook Jeon; Myounggon Kang; Hyungcheol Shin

doi:10.1109/EuroSimE.2019.8724510

Analysis of self heating effect in vertical-channel field effect transistor

Ilho Myeong, Jongwook Jeon, Myounggon Kang, Hyungcheol Shin

School of Advanced Fusion Studies

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

In this paper, self-heating effect in newly introduced Vertical FET is investigated and discussed, and several architecture parameters such as channel width, number of channels affecting thermal reliability of VFET are studied through simulations. It is illustrated that VFET shows high lattice temperature and thermal resistance increase from changes in such architecture parameters. And lattice temperature imbalance between channels which causes performance and lifetime differences can be mitigated by adjusting the spacing between channels of multi-channel VFETs.

Original language	English
Title of host publication	2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538680407
DOIs	https://doi.org/10.1109/EuroSimE.2019.8724510
State	Published - Mar 2019
Event	20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019 - Hannover, Germany Duration: 24 Mar 2019 → 27 Mar 2019

Publication series

Name	2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019

Conference

Conference	20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019
Country/Territory	Germany
City	Hannover
Period	24/03/19 → 27/03/19

Access to Document

10.1109/EuroSimE.2019.8724510

Cite this

Myeong, I., Jeon, J., Kang, M., & Shin, H. (2019). Analysis of self heating effect in vertical-channel field effect transistor. In 2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019 Article 8724510 (2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuroSimE.2019.8724510

Myeong, Ilho ; Jeon, Jongwook ; Kang, Myounggon et al. / Analysis of self heating effect in vertical-channel field effect transistor. 2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019).

@inproceedings{f7a3e429467a4ac1b6a5b259f1860382,

title = "Analysis of self heating effect in vertical-channel field effect transistor",

abstract = "In this paper, self-heating effect in newly introduced Vertical FET is investigated and discussed, and several architecture parameters such as channel width, number of channels affecting thermal reliability of VFET are studied through simulations. It is illustrated that VFET shows high lattice temperature and thermal resistance increase from changes in such architecture parameters. And lattice temperature imbalance between channels which causes performance and lifetime differences can be mitigated by adjusting the spacing between channels of multi-channel VFETs.",

author = "Ilho Myeong and Jongwook Jeon and Myounggon Kang and Hyungcheol Shin",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019 ; Conference date: 24-03-2019 Through 27-03-2019",

year = "2019",

month = mar,

doi = "10.1109/EuroSimE.2019.8724510",

language = "English",

series = "2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019",

address = "United States",

}

Myeong, I, Jeon, J, Kang, M & Shin, H 2019, Analysis of self heating effect in vertical-channel field effect transistor. in 2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019., 8724510, 2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019, Institute of Electrical and Electronics Engineers Inc., 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019, Hannover, Germany, 24/03/19. https://doi.org/10.1109/EuroSimE.2019.8724510

Analysis of self heating effect in vertical-channel field effect transistor. / Myeong, Ilho; Jeon, Jongwook; Kang, Myounggon et al.
2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8724510 (2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Analysis of self heating effect in vertical-channel field effect transistor

AU - Myeong, Ilho

AU - Jeon, Jongwook

AU - Kang, Myounggon

AU - Shin, Hyungcheol

PY - 2019/3

Y1 - 2019/3

N2 - In this paper, self-heating effect in newly introduced Vertical FET is investigated and discussed, and several architecture parameters such as channel width, number of channels affecting thermal reliability of VFET are studied through simulations. It is illustrated that VFET shows high lattice temperature and thermal resistance increase from changes in such architecture parameters. And lattice temperature imbalance between channels which causes performance and lifetime differences can be mitigated by adjusting the spacing between channels of multi-channel VFETs.

AB - In this paper, self-heating effect in newly introduced Vertical FET is investigated and discussed, and several architecture parameters such as channel width, number of channels affecting thermal reliability of VFET are studied through simulations. It is illustrated that VFET shows high lattice temperature and thermal resistance increase from changes in such architecture parameters. And lattice temperature imbalance between channels which causes performance and lifetime differences can be mitigated by adjusting the spacing between channels of multi-channel VFETs.

UR - http://www.scopus.com/inward/record.url?scp=85067431034&partnerID=8YFLogxK

U2 - 10.1109/EuroSimE.2019.8724510

DO - 10.1109/EuroSimE.2019.8724510

M3 - Conference contribution

AN - SCOPUS:85067431034

T3 - 2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019

BT - 2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019

Y2 - 24 March 2019 through 27 March 2019

ER -

Myeong I, Jeon J, Kang M, Shin H. Analysis of self heating effect in vertical-channel field effect transistor. In 2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8724510. (2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019). doi: 10.1109/EuroSimE.2019.8724510

Analysis of self heating effect in vertical-channel field effect transistor

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